国家/地区 中国（17） 美国（13） 世界知识产权组织（6） 韩国（5） 日本（4） 台湾（3） 德国（2） 欧洲专利局（EPO）（2） 英国（2）
IPC部 C（32）
IPC大类 C23（32）
IPC小类 C23C（32） H01L（9） C01B（7）
C01G（3） C30B（3） H01J（3）
H01M（3） B01J（2） B82Y（2）
IPC C23C016/455（32）
发明人 DIXON S（2） LIU Z（2） MALLICK A B（2）
WAN G（2） WANG G（2）
公开年 2021（15） 2022（15） 2023（2）
申请年 2021（32）
专利权人 APPLIED MATE.（3） PARAGRAF LTD（2） TOKYO ELECTR.（2） UNIV HAINAN（2）

Depositing gate dielectric on two-dimensional material involves depositing seed layer over atomically smooth surface of two dimensional material, evaporating predefined thickness of seed layer from atomically smooth surface, and performing atomic layer deposition.

SHRIVASTAVA M, KHANEJA M, MEERSHA A

Depositing high-quality aluminum oxide thin films on surface of graphene comprises cleaning graphene substrate and adding into atomic layer deposition chamber, passing water molecules into atomic layer deposition chamber for pretreatment, obtaining required film and cooling.

LI N, LU W, LIU T, ZHANG Y, FAN T, XIA Y, WU S, TANG C, QU F

Vacuum processing apparatus for removing oxidizing gas, comprises decompressable process container, supply port that is formed on side wall of process container and configured to supply, to process container, and apparatus also comprises ionic liquid that absorbs oxidizing gas.

HAYAKAWA T, UMESHITA N, AKIYAMA K, SEKIGUCHI K, ASAKO R, NAKANO T, ARYAL D, ROTONDARO A, IWASHITA M, IIZUKA Y, UEDA H

-Product comprises solid state electrolyte particle coated with a coating consisting essentially of metal oxide, and prepared by depositing a coating on a solid state electrolyte particle by atomic layer deposition.

WOOD M, MILLER J, ESPITIA J A, YE J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Wafer for CVD growth of uniform graphene at temperature in excess temperature, comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across insulating layer, where barrier layer is alumina and/or hafnium oxide layer.

JAGT R, KAINTH J, DIXON S

Apparatus for depositing two-dimensional material, comprises planar high-frequency antenna formed on second surface of dielectric window, and first gas nozzle configured to provide source gas into chamber.

SHIN H, SHIN K, LEE C, LEE C S, SHIN K W, SHIN H J

Preparing copper-based graphene useful for preparing copper-based graphene conductor of electric wire cable, comprises performing surface cleaning and drying on copper material, stacking with high temperature resistant substrate, annealing, and growing graphene layer on copper material surface.

FU J, YANG J, SHEN H, ZHANG W, MA Y

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Thinning transition metal dichalcogenide in electronic device by illuminating first location of transition metal dichalcogenide material with electromagnetic radiation while applying positive potential between material and gate electrode.

ZHENG Y, HUANG S