国家/地区 美国（13）
IPC部 C（13）
IPC大类 C23（13）
IPC小类 C23C（13） H01L（4） C01B（3）
H01J（3） B01J（2） C01G（2）
H01M（2）
IPC C23C016/455（13）
发明人 MALLICK A B（2）
公开年 2021（7） 2022（6）
申请年 2021（13）
专利权人 APPLIED MATE.（3）

Vacuum processing apparatus for removing oxidizing gas, comprises decompressable process container, supply port that is formed on side wall of process container and configured to supply, to process container, and apparatus also comprises ionic liquid that absorbs oxidizing gas.

HAYAKAWA T, UMESHITA N, AKIYAMA K, SEKIGUCHI K, ASAKO R, NAKANO T, ARYAL D, ROTONDARO A, IWASHITA M, IIZUKA Y, UEDA H

-Product comprises solid state electrolyte particle coated with a coating consisting essentially of metal oxide, and prepared by depositing a coating on a solid state electrolyte particle by atomic layer deposition.

WOOD M, MILLER J, ESPITIA J A, YE J

Apparatus for depositing two-dimensional material, comprises planar high-frequency antenna formed on second surface of dielectric window, and first gas nozzle configured to provide source gas into chamber.

SHIN H, SHIN K, LEE C, LEE C S, SHIN K W, SHIN H J

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Preparing thin free-standing oxide film as supports of metal particles for catalysis studies, as electrodes in electrocatalysis, in batteries, and in many other applications, involves providing substrate, depositing layer of metal on substrate, depositing supporting layer on layer of metal.

SANCHEZ C M, SALMERON M, SCHWARTZBERG A, VAN SPRONSEN M, ZHAO X, LU Y

Depositing nanoscale-thin film in preselected area on substrate, involves depositing layer of functionalizing molecule onto or adjacent to surface of substrate, and functionalizing surface of substrate by focusing source of ionizing radiation onto layer of functionalizing molecule.

YOUNG M J, MASCHMANN M R

Producing octahedral transition metal dichalcogenides involves forming transition metal layer on substrate and injecting chalcogenide-containing gas onto the substrate together with plasma treatment.

VINIT K, KIM H U, LEE J, SEOK H, KIM T, KIM T S, SEOK H H, WOO K H, CANADEVINIT

Structure e.g. porous metal-coated structure used for e.g. catalytic application, comprises substrate comprising activated adsorbent material, and metal material deposited on substrate.

PEPIN P, ETHRIDGE K, THOMSON C, HOLBROOK B, ESRIDGE K

Vapor deposition process for selectively depositing material on a first surface of substrate relative to a second organic surface for semiconductor device, comprises contacting the substrate cyclically with a vapor phase hydrophobic first reactant and a vapor phase second reactant.

TOIS E, HAUKKA S P, NISKANEN A, MATERO R H, SUEMORI H, FAERM E

Method for production of atomic bilayer nanotape, involves oxidizing portion of monolayer to provide oxidized portion, and removing oxidized portion to provide atomic layer nanotape comprising transition metal dichalcogenide material.

HARUTYUNYAN A R, LI X