国家/地区 美国（17） 世界知识产权组织（9） 台湾（6）
IPC部 H（16） C（13）
IPC大类 H01（16） C23（13） C01（6）
IPC小类 H01L（16） C23C（13） C01B（6）
H01J（3）
IPC C23C016/26（13） H01L021/02（8） H01L021/768（8）
H01L021/285（7） C23C016/455（5） H01L023/532（5）
C23C016/02（4） C23C016/50（3） C23C016/511（3）
H01J037/32（3） H01L021/3205（3） H01L021/3213（3）
C01B031/04（2） C01B032/184（2） C01B032/186（2）
发明人 MALLICK A B（5） NEMANI S D（4） SINGHA R S（3）
YING C C（3） CHEN E（2） CHUA T C（2）
GANDIKOTA S（2） HWANG H D（2） INGLE N K（2）
JIANG H（2） LANG C（2） LIANG Q（2）
LU C（2） MEBARKI B（2） NAIK M（2）
公开年 2023（5） 2021（4） 2022（4） 2020（2）
申请年 2021（5）  2022（5）  2019（3）  2020（2） 
专利权人 APPLIED MATERIALS INC（17）

Method for forming optical device using nanoimprint lithography, involves subjecting imprintable optical device material to cure process, where cure process transfers optical device critical dimension to optical device structures of optical device pattern formed by cure process.

LUO Y, XU Y, LUO K, GODET L

Method for processing semiconductor, involves material layer formed on portion of liner and metal-containing layer, where layer of material comprises graphene and portion of material layer on liner is removed.

MALLICK A B, SINGHA R S, GHOSH S, ROY S S

Processing semiconductor for producing high quality devices and structures, involves delivering carbon-containing precursor and hydrogen-containing precursor to processing region of semiconductor processing chamber, forming layer of graphene on substrate positioned in processing region of chamber.

INGLE N K, MALLICK A B, SINGHA R S, WANG J

Method for forming interconnect structure involves etching lithographic patterning structure to form partially patterned structure having first conductive lines and to expose top surface of first etch stop layer, etching first etch stop layer of patterned structure, and forming self-aligned via.

NAIK M, HWANG H D, LANG C, REN H, LU C, JIANG H

Formation of graphene layer for semiconductor device, involves exposing substrate comprising conductive and dielectric materials to plasma to clean conductive material, and exposing substrate to another plasma to form graphene layer.

MEBARKI B, CHUA T C, VALENCIA C W, LEE J J, TANG X, CHEN X

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Improving graphene deposition involves exposing substrate surface to oxygenating plasma to improve substrate surface quality or deposition parameter, where oxygenating plasma comprises oxygen or water, oxygenating plasma is microwave plasma, remote plasma, conductively coupled plasma.

YIEH E Y, NEMANI S D, YING C C, LIANG Q, CHEN E, ZHOU J

Forming airgap in semiconductor structure is used to produce high quality devices and structures, involves forming high-k material on floor of trench, trench occurs on semiconductor substrate between sidewalls of first material and spacer material, forming gate structure on high-k material.

SACHID A B

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A