国家/地区 美国（9）
IPC部 H（8） C（7）
IPC大类 H01（8） C23（7） C01（4）
IPC小类 H01L（8） C23C（7） C01B（4）
H01J（2）
IPC C23C016/26（7） H01L021/768（6） H01L021/285（5）
H01L021/02（4） H01L023/532（3） C01B031/04（2）
C23C016/02（2） C23C016/455（2） C23C016/50（2）
C23C016/511（2） C23C016/54（2） H01J037/32（2）
H01L021/3205（2） H01L021/3213（2） H01L029/16（2）
发明人 MALLICK A B（3） CHUA T C（2） MEBARKI B（2）
ROY S S（2） SINGHA R S（2）
公开年 2023（3） 2022（2）
申请年 2021（3）  2019（2）  2022（2） 
专利权人 APPLIED MATERIALS INC（9）

Method for forming optical device using nanoimprint lithography, involves subjecting imprintable optical device material to cure process, where cure process transfers optical device critical dimension to optical device structures of optical device pattern formed by cure process.

LUO Y, XU Y, LUO K, GODET L

Method for processing semiconductor, involves material layer formed on portion of liner and metal-containing layer, where layer of material comprises graphene and portion of material layer on liner is removed.

MALLICK A B, SINGHA R S, GHOSH S, ROY S S

Formation of graphene layer for semiconductor device, involves exposing substrate comprising conductive and dielectric materials to plasma to clean conductive material, and exposing substrate to another plasma to form graphene layer.

MEBARKI B, CHUA T C, VALENCIA C W, LEE J J, TANG X, CHEN X

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Forming interconnect structure, comprises e.g. etching patterned interconnect stack and first etch stop layer to form first conductive lines and second conductive lines and expose top surface of first etch stop layer and barrier layer.

JIANG H, LU C, REN H, LANG C, HWANG H D, NAIK M

Forming electronic device i.e. 3-dimentional NAND device involves forming graphene barrier layer on substrate surface and depositing fill layer over barrier layer that prevents diffusion of elements between fill layer and substrate surface.

WU Y, GANDIKOTA S, MALLICK A B, NEMANI S D

Susceptor has first fluoro polymer layer that is arranged on first surface of susceptor portion, and graphene layer is arranged on first fluoro polymer layer.

VISSER R J, JEONG S, DODABALAPUR A

Method for depositing graphene on substrate for semiconductor device, involves heating substrate in chemical vapor deposition chamber and flowing carbon precursor into chamber.

PADHI D, JANZEN J, SHAIKH S, KIM B, CHIN B, KIM B H