国家/地区 中国（10）
IPC部 C（6） H（4） B（3）
G（2）
IPC大类 C01（4） H01（4） B82（3）
C23（2）
IPC小类 C01B（4） H01L（4） B82Y（3）
C23C（2）
IPC C01B031/04（4） B82Y040/00（3） C01B032/194（2）
发明人 CHEN X（5） GUO L（5） GU C（4）
LI J（4） WANG Y（3） JIA Y（2）
QUAN B（2） TANG C（2） YANG H（2）
ZHANG H（2）
公开年 2016（10）
申请年 2016（4）  2014（3）  2015（3） 
专利权人 CHINESE ACAD SCI PHYSICS INST（10）

Light source irradiate photovoltaic device, has electrode located on gain semiconductor substrate that is formed with graphene layer, where light energy of light source is greater than band gap of high blocking gain semiconductor substrate.

GUO L, CHEN X

Regulating and controlling graphene band gap comprises preparing graphene sample on substrate, coating electron beam resist, coating electrode, exposing, developing, fixing to form and etching spin-coated electron beam resist.

GU C, ZHANG H, YANG H, TANG C, LI J

Crucible for growing graphene on silicon carbide sheet, comprises cylindrical crucible body and crucible cap on cylindrical crucible body.

LU W, GUO L, CHEN X

Preparation of graphene insulation for metal substrate comprises heating graphene sample, depositing silicon on graphene surface and cooling.

ZHANG Y, WANG Y, GAO H

Method for preparing surface enhanced Raman substrate used in research area, involves coating metal particle on surface layer of graphene nano-sheets, so as to obtain surface enhanced Raman substrate.

GU C, LI J, QUAN B, WANG Y

Preparing nanoscale graphene structure involves selecting substrate and growing graphene on substrate, depositing chromium film on graphene, etching graphene using ion beam etching technology, removing metallic film to obtain pure nanoscale.

GU C, LI J, QUAN B, YANG H, TANG C, ZHANG H

UV detector of graphene coated silicon carbide nano wire, has silicon oxide/silicon substrate that includes graphene layer whose both ends are arranged with electrodes, and whose back side is arranged with back gate electrode.

CHEN X, GUO L, JIA Y

Wavelength tunable UV detector has support substrate that is arranged with aluminum gallium nitride layer and graphene layer whose ends are arranged with electrodes on which electrode leads are arranged via bonding.

CHEN X, GUO L, WANG W, ZHAO M

Growing graphene on insulation substrate involves cleaning insulation substrate and dispersed graphene micro-particles, placing product in hot filament chemical gas phase deposition system and carried out growth process.

GU C, LI J, LI W, XU S

Epitaxial growth of graphene junction on semi-insulating silicon carbide wafer surface for e.g. multipolar device, involves cleaning semi-insulating silicon carbide wafer surface, implanting boron ion on wafer and annealing wafer.

CHEN X, GUO L, JIA Y, WANG Y