国家/地区 日本（8） 美国（6） 中国（3） 世界知识产权组织（3） 欧洲专利局（EPO）（2）
IPC部 H（9） B（6） C（4）
G（3）
IPC大类 H01（9） B82（6） C01（4）
G01（3）
IPC小类 H01L（9） B82Y（6） C01B（4）
G01J（3）
IPC H01L029/16（5） B82Y040/00（4） H01L023/532（4）
H01L029/786（4） G01J001/02（3） H01L021/02（3）
H01L021/3205（3） H01L021/336（3） H01L021/768（3）
H01L029/778（3） B82Y020/00（2） B82Y030/00（2）
C01B031/02（2） H01L021/04（2） H01L021/20（2）
发明人 KONDO D（9）
公开年 2015（2） 2023（2）
申请年 2009（3）  2021（3） 
专利权人 FUJITSU LTD（9）

Manufacturing optical device by forming resist of predetermined shape on multilayer graphene, and processing multilayer graphene together with resist, removing resist covering, and providing electrode covering exposed inclined end face of multilayer graphene.

KONDO D, HAYASHI K, ASO H

Optical sensor device e.g. graphene-based optical sensor device applied to e.g. automatic door, has resin layer which is configured to cover light receiving region of graphene layer and is transparent to light to be detected.

NORIMATSU M, KONDO D

Photosensor device for use in automatic doors, security camera systems, and inspections of infrastructure, comprises passivation layer provided with openings that communicate with holes, where side surfaces of holes and inner walls of openings are continuously covered with insulating thin film.

KONDO D, NORIMATSU M, KONDO O

Photo detection element of optical sensor used in imaging device, has infrared light-receiving layer that includes graphene layers and spacer layers that are alternately stacked, where infrared light passes through spacer layers.

SATO S, NISHINO H, KONDO D, HAYASHI K, KONDO T

Semiconductor device manufacturing method, involves forming catalyze membrane on insulator, forming graphene layer with electric conduction film, matching conduction film with insulator, and performing graphene layer thin changing process.

KONDO D, SATO S

Manufacturing method of graphene film, involves removing catalyst metal film in oxidation atmosphere of oxidizer and transferring graphene film to substrate.

KONDO D, NAKANO H, KONDO T, NAKANO M

Wiring structure used for semiconductor device e.g. large scale integration, comprises carbon nanotubes and graphene, which are connected electrically through metal block.

SATO S, KONDO D, SATO M, NIHEI M, KONDO T

Manufacturing method of semiconductor device for, e.g. personal computer (PC), involves forming conductive film touching graphene layer on insulator.

KONDO D, SATO S

Graphite structure of electronic component e.g. thermoelectric conversion element, has domains that are formed by laminated structure of graphene sheet that are arranged in plane, such that adjacent domains are connected.

KONDO D, SATO S, IWAI T