国家/地区 美国（17）
IPC部 H（13） C（6） B（4）
A（2） G（2）
IPC大类 H01（12） B01（3） C01（3）
A61（2） C02（2） C23（2）
IPC小类 H01L（12） C01B（3） A61K（2）
B01J（2） C02F（2） C23C（2）
IPC H01L029/16（7） H01L029/66（6） H01L029/786（4）
H01L029/06（3） H01L029/10（3） H01L029/78（3）
A61K009/06（2） C23C016/26（2） H01L021/02（2）
H01L029/167（2） H01L031/0224（2） H01L031/028（2）
H01L031/113（2）
发明人 LEE B H（6） HAM M H（3） JUNG G Y（3）
KIM S Y（3） KIM Y J（3） CHANG K E（2）
HAM M（2） HWANG H J（2） JUNG G（2）
MYUNGWOO S（2） PARK Y S（2） SON M（2）
SON M W（2） SUN M（2） XIAN W（2）
公开年 2017（5） 2014（2） 2015（2） 2016（2） 2018（2） 2021（2）
申请年 2017（5）  2016（3）  2020（3）  2012（2） 
专利权人 GWANGJU INST SCI TECHNOLOGY（17）

Tribological power generator for harvesting triboelectric electricity, comprises flexible electrode unit with metal layer provided between first and second dielectric layer and triboelectric charging is generated by contact and non-contact.

OH B, SHIN Y, CHO S, JUNG G, OH B S, SEOP S Y, JUNG G Y

Graphene semiconductor junction device comprises substrate, gate electrode, gate insulating layer, graphene layer, semiconductor layer, drain electrode, and source electrode on graphene layer to be separated from semiconductor layer.

KIM K Y, KIM S Y, LEE B H, KIM K

Graphene-semiconductor hetero-junction photodetector for performing photodetection function, has drain electrode that is formed in direction perpendicular to direction in which source electrode is connected to graphene layer.

LEE B H, CHANG K E

Method for doping synthesized graphene by high temperature heat treatment in gas atmosphere containing dopant,.

HAM M H, SON M W, MYUNGWOO S

Graphene-based ternary barrister, has gate electrode layer formed on center of substrate, source electrode layer arranged to two sides of graphene channel layer, and drain electrode layer arranged to two sides of source electrode layer.

LEE B H, SHIM C H, KIM Y J, KIM S Y

Non-volatile memory device e.g. NOT-AND (NAND) Flash, has resistance layer including stack of graphene oxide film and iron oxide film, in which resistance value of resistance layer varies based on voltage applied to upper electrode.

JANG J H, ANOOP R, OH S I, RANI A

Formation of metal-graphene hetero-junction metal interconnect for semiconductor device, involves depositing carbon source on substrate, depositing metal catalyst layer on carbon source layer, and heat treating substrate to form graphene.

HAM M, SON M, HAM M H, MYUNGWOO S, XIAN W, SUN M

Graphene photodetector, has drain electrode formed on semiconductor substrate, and gate insulation layer formed on graphene channel, where gate electrode is formed on gate insulation layer, and comprises light transmittance.

LEE B H, CHANG K E, YOO T J, HWANG H J

Graphene transistor for inverter of electronic device, has graphene channel including graphene region opposite to another graphene region based on doped graphene region and formed with Fermi level different from that of doped region.

LEE B H, KIM Y J, KIM S Y

Graphene-based membrane used as e.g. reverse osmosis membrane comprises monolayer graphene containing defects, deposition layer disposed on defects, and nanopores surrounded by deposition layer.

KIM I S, YANG E, SONG J, KIM C, KIIM I S, YANG E T, SONG J H, KIM C M