国家/地区 美国（10）
IPC部 H（7） B（6） C（5）
G（3）
IPC大类 H01（4） G06（3） H05（3）
B29（2） B32（2） C09（2）
C23（2） C25（2） G01（2）
IPC小类 H01L（4） G06F（3） B29C（2）
B32B（2） C09D（2） C23C（2）
C25D（2） H05K（2）
IPC C25D011/02（2） G06F001/16（2） H01L021/20（2）
H01L047/00（2）
发明人 WANG S（4） WILLIAMS R S（4） MIAO F（3）
WU K（3） WU W（3） YANG J（3）
公开年 2011（4） 2021（3） 2010（2）
申请年 2010（4）  2008（2） 
专利权人 HEWLETTPACKARD DEV CO LP（10）

Substrate coated with thermal management material comprising thermal conductive coat deposited on substrate, and heat insulation coat comprising plant root powder and resin, used in electronic device e.g. computer and laptop.

ANANDAKRISHNAN S, WU K

Cover for electronic device, comprises substrate comprising metal, insert molded plastic on surface(s) of substrate, passivation layer or micro-arc oxidation layer, coating composition, outmold decoration layer, and chamfered edge.

WU K, CHANG C H, CHEN Y Y

Flexible printed article used in wearable device e.g. conductive contact pad, comprises non-conductive, graphene oxide membrane base substrate, and electronic component positioned on non-conductive, graphene oxide membrane base substrate.

IONESCU R C, HOLDER H A, WITTKOPF J A, WORSLEY R, CASIRAGHI C, SHIELDS J P

Multi-layered sheet for use as housing for electronic devices, has graphene-based barrier coating that includes specified amount of graphene and is formed on micro-arc oxidized layers and has prescribed thickness.

WU K, CHANG C, CHEN W

Flexible metamaterial structure used in magnetic cloaking devices comprises flexible substrate, and two-dimensional graphene blocks disposed in an array on/in the substrate, where the block contains graphene sheets.

BRATKOVSKI A M, KOPELEVITCH I V

Graphene memristor used as switches in electronic circuits comprises two electrodes, active region interspersed between the electrodes, defective graphene structure, fast diffusing ions, and a source that generates the electric field.

MIAO F, YANG J, WU W, WANG S, WILLIAMS R S

Defective graphene-based memristor, used in nanoelectronic memories, computer logic and neuromorphic computer architectures, comprises first electrode, defective graphene structure, memristive material, second electrode and voltage source.

YANG J, MIAO F, WU W, WANG S, WILLIAMS R S

Memristive device used in crossbar array, has graphene (20) or graphite that is arranged between active region and bottom electrode or top electrode.

YANG J, MIAO F, WU W, WANG S, WILLIAMS R S

Semiconductor structure of e.g. transistor, has epitaxial lateral over growth (ELOG) material positioned upon thermally and electrically conductive (TEC) mask and formed of carbon nanostructures and graphene material.

MATHAI S V, THYLEN L H, WANG S

Formation of graphene layer comprises establishing insulating layer on substrate to form seed region and exposing seed material in seed region to carbon-containing precursor gas.

KAMINS T I, QUITORIANO N, WILLIAMS R S