国家/地区 中国（15）
IPC部 H（12） B（8） G（8）
C（5）
IPC大类 H01（10） G01（8） B81（5）
C01（5） B82（4） H04（3）
IPC小类 H01L（9） B81B（5） C01B（5）
G01N（5） B81C（4） B82Y（4）
H04R（3） G01R（2）
IPC H01L029/16（7） B81B007/02（5） G01N027/12（5）
B81C001/00（4） G01N033/00（4） B81B003/00（3）
C01B031/04（3） H01L021/02（3） H01L029/06（3）
H01L029/78（3） B82Y030/00（2） B82Y040/00（2）
C01B032/194（2） G01R033/07（2） H01L021/04（2）
发明人 RUHL G（8） RUHR G（6） SCHULZE H（3）
DEHE A（2） DEU A（2） KOENIG M（2）
ROTH A M（2） ZOEPFL A（2）
公开年 2015（3） 2016（3） 2022（3）
申请年 2014（4）  2012（2）  2015（2）  2021（2）  2022（2） 
专利权人 INFINEON TECHNOLOGIES AG（15）

Temperature-regulated chemi-resistive gas sensor for use in e.g. mobile phone, has circuitry for determining electrical sensor layer conductance signal representing varying electrical conductance of sensor layer and applying time windows.

ZOEPFL A, ROTH A M, EMMERT M, MEYER M, KRIVEC M, BREUER W, KRIEBECK M, ROSS A L, JOYPLE A, ROTH M A

Gas sensor for detection of hydrogen, has cavity that is hermetically sealed except for gas passage structure, and one or more sensor elements are configured to detect presence of one or more gases in cavity.

SCHALLER R M, EBERL M, JOST F, HEBERT M

Discrete or vertical power transistor device e.g. metal oxide semiconductor FET, for integrated circuit, has control electrode whose carbon adjoins dielectric opposite to channel region, where control electrode comprises gate electrode.

STORBECK O, SCHULZE H, SCHLOESSER T, MURI I, SIEMIENIEC R, STOBECK O, SCHLOSSER T

Gas sensing device e.g. chemiresistor gas sensing device for sensing target gas, has signal calibration unit that determines calibrated measurement value based on measurement signal and based on calibration model.

CARBONELLI C, KRUMBEIN U, TRAVAN C, KRUMBANE U

Composite material used for chemoresistive gas sensor, comprises graphene material, carbon nanotube material and metal-containing material including at least one metal element.

ROTH A M, ZOEPFL A, ROSS A M

Method for forming graphene membrane component for microphone, involves performing energy of adhesion between adhesive layer and graphene membrane which is greater than energy of adhesion between bulk region and graphene membrane.

RUHL G, KOENIG M, RUHR G

Electronic device e.g. passive element, has dielectric structure whose first contact region and second contact region are configured to adjust electrical characteristics of two-dimensional material in contact surfaces of graphene layer.

KOENIG M, RUHL G, RUHR G

Forming graphene structure, comprises forming body with protrusion and forming graphene layer at protrusion outer peripheral surface, or forming cylindrical opening in body and forming graphene layer at inner peripheral surface of opening.

IRSIGLER P, RUHL G, SCHULZE H, SHULZ H, RUHR G, ILSGLLE P

Method for processing substrate used in manufacture of e.g. electronic devices, involves forming graphene layer from specific layer on surface of carrier by temperature treatment.

PRUEGL K, RUHL G, RUHR G, PRUGER K

Micro electromechanical system (MEMS) device e.g. MEMS microphone has membrane that is extended over cavity of support and is partially reinforced by graphene.

MASSONER J, MASONE J