国家/地区 中国（12） 美国（3） 世界知识产权组织（3）
IPC部 H（12）
IPC大类 H01（11）
IPC小类 H01L（11）
IPC H01L021/336（4） H01L029/78（4） H01L031/18（4）
H01L029/06（3） H01L031/0216（3） H01L029/16（2）
H01L031/0224（2）
发明人 LIU X（12）
公开年 2013（4） 2017（4） 2012（3）
申请年 2016（4）  2010（3）  2011（2）  2012（2） 
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（12）

Graphene/gallium arsenide solar battery, has window layer arranged on graphene layer, where graphene layer is provided with anti-reflecting layer i.e. transparent film that is placed away from surface of window layer.

SUN H, JIA R, TAO K, DAI X, JIN Z, LIU X

Method for preparing graphene/gallium arsenide (GaAs) solar battery, involves etching heavily doped gallium GaAs layer between front electrode grid lines to and preparing anti-reflective layer on surface of exposed graphene layer.

JIA R, GUI Y, SUN H, TAO K, DAI X, JIN Z, LIU X

Graphene/gallium arsenide solar battery, has hollow area located corresponding to positive electrode grid line and coated with anti-reflection coating, and heavy doping gallium arsenide cap layer arranged with graphene layer.

JIA R, GUI Y, SUN H, TAO K, DAI X, JIN Z, LIU X

Preparation of graphene/gallium arsenide solar cell involves preparing window layer on gallium arsenide epitaxial wafer surface, heavily doped gallium arsenide cap layer on window layer surface, and front electrode on cap layer surface.

SUN H, JIA R, TAO K, DAI X, JIN Z, LIU X

Analog-to-digital converter, has multi-path distributor provided with multiple graphene channels and gate contact, where included angle is formed between each graphene channel and gate contact.

JIN Z, LIU X, YE T, CHEN D, LIANG Q, ZHU H, ZHONG H

Graphene device for use as multi-channel selective device, e.g., multiplexer or demultiplexer, has graphene channels which are in contact and electrically connected with gate, in which graphene channels and gate have different angles.

JIN Z, LIANG Q, LIU X, YE T, ZHONG H, ZHU H, CHEN D

Graphene radial direction heterojunction solar battery, has single crystal silicon substrate formed with p-type or n-type silicon nano-passivation film, and mono-crystalline silicon substrate placed with back electrode.

JIA R, JIN Z, CUI D, CHEN C, DING W, LIU X, QIAO X

Manufacturing method for graphene device, involves providing substrate, where substrate comprises insulating layer and semiconductor layer, forming source/drain contact plug on back gate electrode.

ZHU H, LIU X, ZHONG H, LIANG Q, JIN Z

FET, has source and drain contact electrodes and graphene trench region that are linked together, where graphene trench region is formed on upper part of insulating substrate.

LIU X, LIU M, HAN M, JI Z, WANG H, SHANG L

FET, has source/drain contact electrode and graphene trench region formed on insulating medium layer, where source contact and drain contact electrodes are respectively connected with graphene trench region.

LIU X, LIU M, HAN M, JI Z, WANG H, SHANG L