国家/地区 中国（11）
IPC部 H（7） C（3）
IPC大类 H01（7） C23（2）
IPC小类 H01L（7） C23C（2）
IPC H01L021/336（3） C23C016/01（2） C23C016/26（2）
C23C016/56（2） H01L021/02（2） H01L021/04（2）
H01L021/28（2）
发明人 WANG X（11）
公开年 2015（7） 2012（3）
申请年 2014（7）  2011（2） 
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（11）

Atomic-level mechanical peeling cleaning of graphene surface used for field effect transistor or electric conduction film by taking target substrate, adhering graphene, soaking in organic solvent, and dissolving graphene surface.

JIN Z, PENG S, WANG X, ZHANG D, WANG S, SHI J

Method for nondestructively transferring graphene from metal surface to surface of target substrate e.g. glass substrate, involves transferring prepared polymethyl methacrylate/graphene composite film to surface of target substrate.

JIN Z, MA P, WANG X, ZHANG D, SHI J

Graphene metal contact removing method, involves coating spin in optical resist layer, forming metal electrode with image in inorganic layer surface, and providing graphene-metal contact area with inorganic layer.

JIN Z, PENG S, WANG X, ZHANG D, WANG S, SHI J

Graphene field effect transistor preparing method, involves providing semiconductor substrate surface with graphene surface, providing spin with organic or inorganic metal protection layer, and providing metal electrode with optical image.

JIN Z, PENG S, WANG X, ZHANG D, WANG S, SHI J

Forming copper metal surface on substrate by using chemical vapor deposition, involves growing graphene on surface of copper foil and copper electrolyte agar gel, glassy carbon sheet, graphite, conductive glass or indium tin oxide.

JIN Z, MA P, WANG X, ZHANG D, SHI J

Graphene FET device manufacturing method, involves depositing passivation protection layer using selective etching of passivation protecting layer above grid medium layer, and depositing metal forming source on drain metal electrode.

JIN Z, MA P, WANG X, ZHANG D, WANG S, SHI J

Method for aligning graphene for top gate FET device, involves coating metal on source electrode and drain electrode, and connecting graphene top gate FET device body with electric conduction channel and source and drain electrodes.

JIN Z, MA P, WANG X, ZHANG D, WANG S, SHI J

Method for reducing graphene material and contact resistance of metal interconnection structure, involves providing structure using multi-layer graphene in contact area of graphene material and metal using single-layer graphene.

JIN Z, CHEN J, MA P, PENG S, WANG X

Graphene oxide doped zinc oxide nanometer thin film manufacturing method, involves absorbing-coating mixed solution on sensitive membrane of device and drying in vacuum to obtain graphene doped zinc oxide nanometer film.

HOU C, HUO Z, LI D, LIU M, LONG S, YAN X, WANG X, ZHANG M, XIE C, ZHOU W

Method for forming graphene-metal Ohmic contact region, involves performing electronic beam evaporation or sputtering process on surface of sample by deposition of metals and peeling off surface of sample and drain of photoresist.

CHEN J, GUO J, JIN Z, MA P, PAN H, PENG S, WANG X