国家/地区 中国（13） 世界知识产权组织（3）
IPC部 C（11） H（4） B（2）
IPC大类 C01（8） C23（4） H01（4）
IPC小类 C01B（8） C23C（4） H01L（4）
IPC C01B032/194（4） C01B031/04（3） C23C016/26（3）
C01B032/184（2） H01L021/04（2）
发明人 XIA Y（13）
公开年 2011（3） 2013（3） 2017（2） 2019（2） 2021（2）
申请年 2010（3）  2019（3）  2012（2） 
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（13）

Depositing high-quality aluminum oxide thin films on surface of graphene comprises cleaning graphene substrate and adding into atomic layer deposition chamber, passing water molecules into atomic layer deposition chamber for pretreatment, obtaining required film and cooling.

LI N, LU W, LIU T, ZHANG Y, FAN T, XIA Y, WU S, TANG C, QU F

Device for wet transferring graphene film, comprises e.g. target substrate stage which is set in water tank, and is parallel to bottom of water tank, and target substrate set on upper surface of target substrate stage.

LU W, XIA Y, LI N, ZHAO L, LENG X, HE M, JIE X

Method for transferring graphene film on metal substrate, involves placing heated and dried target substrate on bottom surface of water tank, and syringe used to inject acetone solution into water tank to dissolve protective film.

JIE X, LU W, LI N, XIA Y

Selective graphene etching involves setting wavelength, power, and scanning path of laser, focusing through lens array, scanning area of substrate surface, completely etching away thin layer of graphene in area, and forming pattern.

GUAN Y, XIE J, QU F, LI N, ZHAO L, XIA Y

Processing graphene thin film material useful in field-effect transistor, optoelectronics and microprocessor field, comprises e.g. adjusting carrier sample stage to processing positioning point and performing selective scanning modification.

XIE J, QU F, XIA Y, LI N, ZHAO L, GUAN Y

Method for producing graphene material, involves placing carbonaceous compound material in high vacuum environment and irradiating two different wavelengths of laser light in same region of carbonaceous compound material.

XIA Y

Performing chemical modification of graphene used in preparation of graphene devices, by performing photochemical modification of graphene and substrate using pulsed laser patterning, and subjecting to atomic layer selective deposition.

LU W, XIA Y, CHENG S, ZHANG Q, WANG H, LI N

Preparation of graphene wafer involves activating substrate, in which wafer is to-be-deposited, controlling thickness of graphene by ion-implantation process, contacting with surface of graphite, and applying external physical field.

XIA Y, LI C, XIE J, LUO W, ZHANG Y

Manufacture of graphene involves adding powdery graphite into mixed solvent, ultrasonically treating, centrifuging and removing supernatant.

XIE J, ZHANG Y, LI C, LUO W, XIA Y

Method for thinning multi-layer graphene used in e.g. nano sensor, involves adjusting process parameter such as pulse bias voltage and plasma injection time of inert gas of plasma immersion ion implantation device.

XIE J, XIA Y, LI C, LUO W