国家/地区 中国（14） 美国（5） 世界知识产权组织（5）
IPC部 H（13） B（5）
IPC大类 H01（12） B82（4）
IPC小类 H01L（12） B82Y（4）
IPC H01L021/336（8） H01L029/78（7） H01L029/06（6）
B82Y040/00（3） B82Y099/00（3） H01L021/28（3）
H01L029/786（3） B82Y010/00（2） H01L021/04（2）
H01L021/20（2） H01L029/16（2） H01L029/423（2）
H01L029/66（2） H01L029/775（2）
发明人 ZHU H（14）
公开年 2013（4） 2014（4） 2012（3） 2015（2）
申请年 2013（5）  2011（4）  2012（3） 
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（14）

Graphene strip structure manufacturing method, involves forming groove on first medium layer substrate, forming catalyst layer on first medium layer substrate, and forming catalyst layer on groove.

SU Y, ZHU H, ZHAO C, GU K

Semiconductor structure manufacturing method, involves forming interlayer medium layer on contact hole of metal-graphene, and filling electric conduction material in contact hole.

LIANG Q, YE T, ZHU H, ZHONG H

Non-standard electrostatic force switch, has substrate fixed with graphene along arrangement direction, and support electrode connected with source and drain electrodes that are electrically connected together.

SU Y, YANG J, ZHU H, NIE P, GU K

Semiconductor device manufacturing method, involves forming graphene layer with substrate layer, where medium layer is formed with upper end of graphene layer and bump structure, and forming mask side wall with etching layer.

ZHU H, GU K

Semiconductor device manufacturing method involves removing dielectric layer and metal layer, so that graphene layer is transferred onto side of another dielectric layer.

ZHU H, GU K

Interconnection structure, has lower-layer wiring structure formed on substrate, and shielding layer formed on lower-layer wiring structure and arranged with graphene part and upper-layer wiring structure.

SU Y, YANG J, ZHU H, NIE P, ZHAO C, GU K

Analog-to-digital converter, has multi-path distributor provided with multiple graphene channels and gate contact, where included angle is formed between each graphene channel and gate contact.

JIN Z, LIU X, YE T, CHEN D, LIANG Q, ZHU H, ZHONG H

Graphene device for use as multi-channel selective device, e.g., multiplexer or demultiplexer, has graphene channels which are in contact and electrically connected with gate, in which graphene channels and gate have different angles.

JIN Z, LIANG Q, LIU X, YE T, ZHONG H, ZHU H, CHEN D

Manufacturing method for graphene device, involves providing substrate, where substrate comprises insulating layer and semiconductor layer, forming source/drain contact plug on back gate electrode.

ZHU H, LIU X, ZHONG H, LIANG Q, JIN Z

Forming graphene nano-ribbon to form metal-oxide-semiconductor field effect transistor involves forming stack of seed/growth blocking layer on insulating substrate, then patterning and growing graphene nano-ribbon at seed layer side surface.

LIANG Q, LUO Z, YIN H, ZHU H