国家/地区 中国（11）
IPC部 H（9） C（3）
IPC大类 H01（9） C01（3）
IPC小类 H01L（9） C01B（3）
IPC H01L029/16（3） H01L031/0216（3） H01L031/18（3）
H01L021/336（2） H01L031/0224（2）
发明人 JIN Z（8） DAI X（4） JIA R（4）
LIU X（4） PENG S（4） SHI J（4）
SUN H（4） TAO K（4） ZHANG D（4）
HUANG X（3） YAO Y（3） GUI Y（2）
XIA Y（2）
公开年 2017（11）
申请年 2016（6）  2017（5） 
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（11）

Growing patterned graphene comprises forming nickel layer on the surface of substrate for providing growth substrate of graphene, covering surface patterning template on the surface of nickel layer and generating graphene pattern.

ZHANG D, JIN Z, SHI J, PENG S, HUANG X, YAO Y

Floating graphene-silicon heterojunction transistor structure, has gate dielectric layer and gate electrode that are formed on graphene film which is in contact with portion of source and drain regions to form heterojunction.

JIN Z, YAO Y, HUANG X, SHI J, PENG S, ZHANG D

Graphene device manufacturing method involves testing metal electrode around self aligned metal layer, so as to partially cover self-aligned metal layer.

PENG S, JIN Z, ZHANG D, SHI J

Self-aligned graphene-based FET manufacturing method, involves forming photo-resist with photo-resist layer, forming gate electrode with photo-resist layer and gate structure, and generating source electrode and drain electrode.

JIN Z, HUANG X, YAO Y, PENG S, SHI J, ZHANG D

Graphene/gallium arsenide solar battery, has window layer arranged on graphene layer, where graphene layer is provided with anti-reflecting layer i.e. transparent film that is placed away from surface of window layer.

SUN H, JIA R, TAO K, DAI X, JIN Z, LIU X

Method for producing graphene material, involves placing carbonaceous compound material in high vacuum environment and irradiating two different wavelengths of laser light in same region of carbonaceous compound material.

XIA Y

Performing chemical modification of graphene used in preparation of graphene devices, by performing photochemical modification of graphene and substrate using pulsed laser patterning, and subjecting to atomic layer selective deposition.

LU W, XIA Y, CHENG S, ZHANG Q, WANG H, LI N

Lithography of graphene device involves transferring graphene into target substrate, spin-coating polymethylmethacrylate material on graphene, subjecting graphene to deep ultraviolet lithography and depositing metal electrode on graphene.

WANG N

Method for preparing graphene/gallium arsenide (GaAs) solar battery, involves etching heavily doped gallium GaAs layer between front electrode grid lines to and preparing anti-reflective layer on surface of exposed graphene layer.

JIA R, GUI Y, SUN H, TAO K, DAI X, JIN Z, LIU X

Graphene/gallium arsenide solar battery, has hollow area located corresponding to positive electrode grid line and coated with anti-reflection coating, and heavy doping gallium arsenide cap layer arranged with graphene layer.

JIA R, GUI Y, SUN H, TAO K, DAI X, JIN Z, LIU X