国家/地区 中国（11）
IPC部 H（10） B（3） C（3）
G（2）
IPC大类 H01（10） B82（3） C01（3）
G11（2）
IPC小类 H01L（10） B82Y（3） C01B（3）
G11C（2）
IPC H01L021/336（5） H01L029/06（5） H01L029/78（4）
B82Y040/00（3） B82Y099/00（3） H01L021/20（3）
H01L045/00（3） C01B032/194（2） G11C013/00（2）
H01L021/02（2） H01L029/16（2） H01L029/66（2）
H01L029/775（2） H01L029/786（2）
发明人 ZHU H（5） LIANG Q（4） JIN Z（3）
LIU X（3） LV H（3） XIA Y（3）
YE T（3） ZHONG H（3） BANERJEE W（2）
BENAGI R（2） LI N（2） LIU M（2）
LIU Q（2） LUO Z（2） SUN H（2）
公开年 2013（3） 2012（2）
申请年 2012（3）  2011（2）  2015（2）  2019（2） 
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（11）

Resistive random access memory, has barrier structure set between resistance change layer and upper electrode for performing erasing operation on device, where electron passes through conduction band of barrier structure.

XU X, LI X, DONG D, YU J, LV H

Device for wet transferring graphene film, comprises e.g. target substrate stage which is set in water tank, and is parallel to bottom of water tank, and target substrate set on upper surface of target substrate stage.

LU W, XIA Y, LI N, ZHAO L, LENG X, HE M, JIE X

Processing graphene thin film material useful in field-effect transistor, optoelectronics and microprocessor field, comprises e.g. adjusting carrier sample stage to processing positioning point and performing selective scanning modification.

XIE J, QU F, XIA Y, LI N, ZHAO L, GUAN Y

Non-volatile resistive memory, has graphene barrier layer stopping easily oxidizable metal ions from migrating into inert metal electrode through resistive functional layer under effects of electric field during programming process.

LIU Q, LIU M, SUN H, ZHANG K, LONG S, LV H, BANERJEE W, BENAGI R

Storage device, comprises insulating substrate, lower electrode, lower barrier layer graphene, resistive functional layer and upper electrode, where resistive functional layer is located on lower barrier layer graphene.

LV H, LIU M, LIU Q, SUN H, ZHANG K, BENAGI R, BANERJEE W

Graphene device for use as multi-channel selective device, e.g., multiplexer or demultiplexer, has graphene channels which are in contact and electrically connected with gate, in which graphene channels and gate have different angles.

JIN Z, LIANG Q, LIU X, YE T, ZHONG H, ZHU H, CHEN D

Preparation of graphene wafer involves activating substrate, in which wafer is to-be-deposited, controlling thickness of graphene by ion-implantation process, contacting with surface of graphite, and applying external physical field.

XIA Y, LI C, XIE J, LUO W, ZHANG Y

Forming graphene nano-ribbon to form metal-oxide-semiconductor field effect transistor involves forming stack of seed/growth blocking layer on insulating substrate, then patterning and growing graphene nano-ribbon at seed layer side surface.

LIANG Q, LUO Z, YIN H, ZHU H

Semiconductor device, has cap layer set on gate stack and sidewall surrounding gate stack and cap layer, and semiconductor layers epitaxially grown on exposed graphene layer, where metal contact layers are formed on semiconductor layers.

YIN H, LUO Z, ZHU H

Graphene device structure for use in complementary metal oxide semiconductor device, has semiconductor doped region and graphene layer that are formed as drain region and source region of device structure respectively.

LIANG Q, JIN Z, WANG W, ZHONG H, LIU X, ZHU H, YE T