国家/地区 韩国（17） 美国（7） 世界知识产权组织（3）
IPC部 H（17） C（5） G（4）
B（3）
IPC大类 H01（17） B82（3） C09（3）
C01（2） G06（2）
IPC小类 H01L（17）
IPC H01L021/02（5） H01L029/16（4） H01L051/00（4）
B82Y040/00（3） H01L021/285（3） H01L029/78（3）
H01L051/05（3） B82Y020/00（2） C09K011/65（2）
G06N003/063（2） H01L029/66（2） H01L031/0224（2）
H01L045/00（2） H01L051/50（2）
发明人 CHOI S Y（5） CHO B J（4） BONG J H（2）
CHANG B C（2） CHOI S（2） HONG S K（2）
JEON S（2） JUN L（2） JUNHWE C（2）
公开年 2020（4） 2018（3） 2021（3） 2022（3）
申请年 2017（3）  2019（3）  2020（3）  2022（3） 
专利权人 KOREA ADVANCED SCI TECHNOLOGY INST（17）

Two-dimensional horizontal super lattice structure template, has multiple types of two-dimensional materials form super lattice, where multiple types of materials have different strains.

KANGKIBUM, PARK J

Light-emitting device for e.g. displays, includes carbon-containing film comprising at least one carbon atom, and light-emitting alkylene group, where light-emitting group is chemically bonded to at least one carbon atom on surface of carbon-containing film.

HWANG K, CHOI H, KIM J, KWAK S, JEONG J, BAEK S, KIM S, BAIK M, JUNG Y, SIK C Y, BAEK M H, JUNG J H, KIM J H, CHOI H H, HWANG K Y

Resistive RAM, has resistance change material layer that is formed on heat conductive material layer, and second electrode layer which is formed in resistor material layer.

CHOI S Y, CHANG B C

Ion controllable transistor-based neuromorphic synaptic device for implementing e.g. neuromorphic computing, has solid electrolyte layer that is inserted between interlayer insulating film and gate area.

YU J, CHOI Y, MAN Y J

Manufacturing two-dimensional material involves positioning mixed solution of organic solvent in which two-dimensional material is dispersed on substrate.

LEE Y H, SONG T E, AHN C W, YUN H J, HAN H, HEE L Y, SONG T, AN C, YOON H J

Optoelectronic device comprises substrate, channel layer stacked on substrate, source and drain electrodes spaced apart from each other and stacked on channel layer, and photoelectroactive layer stacked between source electrode and drain electrode.

CHOI S Y, SIK Y K, JUN L, PARKJUNGHOON

Soft memristor for soft neuromorphic system has metal diffusion barrier layer formed on first electrode layer, and resistive switching material layer formed on metal diffusion barrier layer.

CHA J H, JANG B C, CHOI S, CHOI S Y, CHANG B C, JUNHWE C

Making doped graphene thin film with mesoporous structure using flash lamp involves coating mixture solution of doping element source-having material with doping element and graphene oxide on substrate and irradiating light to the solution.

CHOI S, CHA J, KIM I, CHOI S Y, JUNHWE C, DOO K, KIM D H

Graphene quantum dot composite useful for electronic devices e.g. electroluminescent devices and flexible display devices, comprises dielectric matrix comprising metal oxynitride, and graphene quantum dots dispersed in dielectric matrix.

JEON S, PARK M, YOON H, WOO J, PARK M S

Graphene spin transistor i.e. FET, for use in e.g. unmanned vehicles, has transition metal dichalcogenide patterns formed to cross graphene layer in transverse direction and spaced in longitudinal direction of graphene layer.

CHO S