国家/地区 美国（8） 中国（4）
IPC部 H（8）
IPC大类 H01（8） H05（4）
IPC小类 H01L（8） H05K（4）
IPC H01L023/367（3） H01L023/373（3） H01L025/065（3）
H01L027/108（3） H01L029/66（3） H01L023/00（2）
H01L023/14（2） H01L023/495（2） H01L023/498（2）
H01L025/00（2） H01L029/786（2） H05K001/11（2）
H05K001/18（2）
发明人 YOO C H（4） FAY O R（2） KING G A（2）
KINSLEY T H（2） NAKANO E（2） PAX G E（2）
RICHARDS R K（2） SHARMA Y（2）
公开年 2021（8）
申请年 2020（4）  2019（2）  2021（2） 
专利权人 MICRON TECHNOLOGY INC（8）

Transistor, comprises channel that comprises two-dimensional material adjacent to seed material, channel oriented perpendicular to base material, gate dielectric adjacent to two-dimensional material, and gates adjacent to gate dielectric.

SMYTHE J A, SANDHU G S, KULA W

Semiconductor device assembly with improved thermal performance, has thermally conductive material layer thermally conducting heat generated by semiconductor device laterally outward toward outer surfaces of encapsulant material.

QU X, CHUN H, QUAN X

Apparatus e.g. dual in-line memory module for performing thermal management, has die that is mounted over substrate and has multiple electrical connections in contact with corresponding one of multiple substrate pads.

RICHARDS R K, KINSLEY T H, KING G A, SHARMA Y, PAX G E, YOO C H

Semiconductor assembly e.g. memory, for manufacturing smaller and faster devices with high density components for computers, has first device mounted overlapping second device i.e. memory device, and thermal-insulator interposer including cavity, where connector couples first and second devices.

YOO C H, FAY O R

Fabricating semiconductor device package, involves forming carbon-based material on sacrificial substrate, inverting sacrificial substrate, bonding sacrificial substrate to wafer comprising semiconductor device components, and removing sacrificial substrate to leave carbon-based material over wafer.

NAKANO E

Integrated assembly e.g. transistor, comprises semiconductor material having more doped region adjacent less doped region, and two-dimensional material between doped regions.

KARDA K M, MOULI C, LIU H

Dual in-line memory module (DIMM) for thermal management, has memory die that is mounted over substrate on uppermost layer of graphene and has electrical connections in contact with corresponding substrate pads.

YOO C H, PAX G E, SHARMA Y, KING G A, KINSLEY T H, RICHARDS R K

Semiconductor device assembly for semiconductor module, has substrates which include graphene layer thermally coupled to thermal connector and configured to transfer thermal energy along horizontal direction across substrate.

YOO C H, FAY O R, NAKANO E