国家/地区 英国（9） 世界知识产权组织（6） 台湾（3） 德国（2） 美国（2）
IPC部 C（8） H（7）
IPC大类 C01（7） H01（7） C23（6）
C30（3）
IPC小类 C01B（7） H01L（7） C23C（6）
C30B（3）
IPC C01B032/186（6） C23C016/26（6） H01L021/02（5）
C23C016/02（4） C23C016/455（3） C30B025/18（3）
C30B029/02（3） H01L029/16（3） C01B032/182（2）
C23C016/40（2） H01L021/20（2） H01L051/52（2）
发明人 DIXON S（10）
公开年 2022（8） 2023（2）
申请年 2021（5）  2022（5） 
专利权人 PARAGRAF LTD（10）

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Graphene substrate comprises graphene layer structure directly on metal oxide layer which is directly on support layer.

DIXON S, KAINTH J, GUINEY I, BADCOCK T J

Manufacture of light-emitting device comprises forming graphene layer structure on non-metallic substrate, forming first layer of dielectric material on first surface portion of structure, and providing source contact and gate contact.

GUINEY I, GRIFFITHS J, DIXON S, THOMAS S, WALLIS R, GILLIN W P, FENWICK O, HUMPHREYS C J, WENG Z

Forming graphene layer structure, comprises providing growth substrate having growth surface, and forming graphene layer on growth surface by chemical vapor deposition, where growth surface is formed of material e.g. yttrium-stabilized zirconia.

DIXON S, GUINEY I, THOMAS S, GRIFFIN R M, BADCOCK T J

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Wafer for CVD growth of uniform graphene at temperature in excess temperature, comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across insulating layer, where barrier layer is alumina and/or hafnium oxide layer.

JAGT R, KAINTH J, DIXON S

Producing graphene useful for electronic devices comprises forming graphene on non-metallic surface of substrate by chemical vapor deposition in reaction chamber and adding precursor in gas phase and suspended in gas into reaction chamber.

DIXON S, GRIFFITHS J, GRIFFIN R M, GUINEY I, THOMAS S

Manufacturing electronic device precursor e.g. organic LED, involves providing silicon wafer having growth surface, forming insulative layer on growth surface, forming graphene monolayer or multi-layer structure on insulative layer, forming further layers and/or electrical contacts.

BADCOCK T J, KAINTH J, DIXON S, GUINEY I, GRIFFIN R M

Forming graphene on silicon substrate for electronic device, comprises providing silicon wafer having growth surface free of native oxides in reaction chamber, and nitriding growth surface with nitrogen-containing gas with wafer.

DIXON S, GUINEY I, THOMAS S, THOMAS S C S