国家/地区 韩国（11） 美国（4） 中国（3） 世界知识产权组织（2）
IPC部 C（11）
IPC大类 C01（11） H01（11） C23（2）
IPC小类 C01B（11）
IPC C01B031/04（8） H01L029/16（4） C01B031/02（2）
H01B001/04（2） H01L021/02（2） H01L021/265（2）
H01L021/28（2） H01L051/00（2） H01L051/50（2）
H01L051/52（2）
发明人 CHO K（2）
公开年 2016（3） 2017（3）
申请年 2016（4）  2014（2） 
专利权人 POSTECH ACADIND FOUND（11）

Manufacturing semiconductor useful in filed of power conversion devices, electric and electronic systems, comprises e.g. implanting dopant into semiconductor, capping material into two-dimensional honeycomb, and heat treating.

KIMSEONGJUN, KANG M J, SHIN H K, LEE N S, JAE P Y, SUNG M J

Method for manufacturing multilayer graphene, involves subjecting graphene precursor to chemical vapor deposition on metal substrate containing nonmetal element, manufacturing graphene that is doped with element on metal substrate.

CHO K, YOO M S, LEE H C, CHO K W, ZHAO J, YU M, LI X

Band gap-retained graphene useful for graphene-based semiconductor and electronic devices, comprises graphene, and an ion provided on the graphene.

CHUNG J W, KIM J G

Surface processing method for graphene substrate of e.g. organic LED used in electronic device, involves forming organic material on one portion of graphene and surface-processing and forming dielectric thin film on organic material.

JAE Y B, SE J K, HYUN J S

Nanoparticle composite used as anode active material for negative electrode for hybrid capacitor, comprises reduced graphine oxide and core-shell nanoparticles on reduced graphene oxide.

LEE J, LIM E

Graphene laminate used in electrode for electronic device chosen from e.g. organic thin-film transistor and organic solar cell, comprises graphene layer comprising electron-donating functional group, and another graphene layer.

CHO K, KIM H, KANG B S, GANG B, KANG B

Manufacturing method of silicon carbide semiconductor device, involves forming protective layer on silicon carbide substrate into graphene, activating impurity, and removing protective layer.

KYEONG K C

New 2,2'-bipyridine-containing metallic complexes useful in graphene-metal complex composite for electronic device, preferably field-effect transistor, light detecting device, capacitor, battery, solar cell and light-emitting diode.

OH J H, LEE E K, LIU X

Preparation of foam-shaped graphene structure for solar cell, involves forming substrate, placing base substrate in reduced graphene oxide colloid solution, boiling by applying heat flux, and overlapping bubbles generated on substrate.

KIM M H, AHN H S, JANG J W, LEE J S

Electrode, useful in electronic device e.g. organic light-emitting device, organic solar cell or organic memory device, comprises graphene-containing layer, and layer having work function gradient formed on graphene-containing layer.

LEE T, HAN T, AHN J, LEE Y, WOO S, LEE T W, HAN T H, AHN J H, YI Y B, LEE Y B, WOO S H, LI R