国家/地区 韩国（9） 美国（9） 中国（4） 欧洲专利局（EPO）（2） 日本（2）
IPC部 H（7） C（4） G（2）
IPC大类 H01（7） C01（4） C23（2）
IPC小类 H01L（6） C01B（4） C23C（2）
IPC H01L021/02（4） H01L029/16（4） C01B032/186（3）
C23C016/26（2） H01L021/324（2） H01L029/66（2）
发明人 SHIN H（6） SHIN H J（6） SHIN K（6）
SHIN K W（6） BYUN K（5） BYUN K E（5）
KIM C（5） LEE C（5） LEE C S（5）
LEE E（4） SONG H（4） SONG H J（4）
AHN S J（3） CHO Y（3） CHO Y C（3）
公开年 2020（7） 2019（2）
申请年 2019（10）
专利权人 SAMSUNG ELECTRONICS CO LTD（10）

Manufacturing graphene-metal structure for semiconductor device by subjecting graphene to surface treatment and forming metal layer on surface-treated graphene.

KIM J H, LEE S Y, AHN S J, KIM J, LIM H S

Graphene structure for e.g. static RAM, has silicon substrate whose surface is arranged with graphene, where material of substrate and carbon of graphene are covalently bonded and arranged between substrate surface and graphene.

LEE E, BYUN K, SONG H, SHIN H, KIM C, SHIN K, LEE C, JUNG A, BYUN K E, SONG H J, SHIN H J, SHIN K W, LEE C S, JUNG A R

Composite conducting agent used for forming electrode for lithium secondary battery, comprises carbonaceous conductive material, and graphene-silica composite comprising matrix comprising graphene and silicon suboxide and/or silicon dioxide.

KIM M, SON I, MAH S, LEE J, LIM M, CHOI J, HAN S, JIN M, SUN Y, MA X, LI Z, LIN M, CUI Z, MAH S K, LIMMINWOO, HYEON C

Graphene formation involves forming carbon monolayer on substrate by injecting reaction gas into reaction chamber, where former reaction gas comprises source being carbon source and including component.

SHIN H, SHIN K, KIM C, NAM S, BYUN K, SONG H, LEE E, LEE C, JUNG A, CHO Y, SHIN H J, SHIN K W, NAM S G, BYUN K E, SONG H J, LEE C S, JUNG A R, CHO Y C

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Electronic device e.g. memory device, has carbon layer having bond structure formed between substrate and ferroelectric layer, comprises nanocrystalline graphene including nano-sized crystals.

HEO J, LEE Y, JO S, SHIN K, SHIN H, XU Z, LI R, ZHAO C, SHEN J, SHEN X, HEO J S, LEE Y S, SHIN K W, SHIN H J

Interconnect structure for electronic device, has metal bonding layer for providing interfacial bonding between metal interconnect and graphene layer, where metal bonding layer includes metal material.

NAM S, SHIN H, SHIN K, KIM C, BYUN K, SONG H, LEE E, LEE C, JUNG A, CHO Y, NAM S G, SHIN H J, SHIN K W, BYUN K E, SONG H J, LEE C S, JUNG A R, CHO Y C

Directly growing of carbon material in production of high-quality graphene, involves adsorbing carbons onto substrate by supplying carbons to substrate, and removing unreacted carbon residues from substrate after supplying carbons.

KIM C, SHIN H, BYUN K, SHIN K, LEE C, NAM S, AN S, LEE J, CHO Y, SHIN H J, BYUN K E, SHIN K W, LEE C S, NAM S G, AHN S J, LEE J H, LEE J I, CHO Y C

Multi-stack graphene structure used in beam steering device, has graphene stack which is comprised of graphene layers made of amorphous graphene, and electric field former that is configured to apply electric field to graphene layers.

JOO W, KANG J, KIM S, BRONGERSMA M L, FAN S

Mass spectrometry apparatus for analyzing a semiconductor wafer, includes hybrid provider which provides zinc oxide-graphene hybrid to predetermined region on semiconductor wafer.

KIM K J, UM K, YOON C S, LEE K, JIN G, YAN J, YIN Z, LI K, KIMKUKJOO, LEE K T, UM K J