国家/地区 美国（46） 韩国（36） 中国（15） 日本（11） 欧洲专利局（EPO）（6）
IPC部 H（45） B（18） C（10）
G（3）
IPC大类 H01（45） B82（16） C01（10）
B32（3） C23（3） G11（2）
H03（2）
IPC小类 H01L（45） B82Y（15） C01B（10）
B32B（3） C23C（3） B82B（2）
G11C（2） H01B（2） H03K（2）
IPC H01L029/78（27） H01L029/16（25） H01L029/786（21）
H01L021/336（17） H01L029/66（16） H01L029/06（13）
H01L029/778（12） H01L029/10（8） H01L051/05（8）
B82Y040/00（7） B82Y099/00（7） C01B031/04（7）
H01L021/02（7） C01B031/02（6） H01L029/08（6）
发明人 HEO J（46）
公开年 2014（11） 2011（7） 2012（7） 2013（7） 2015（3） 2023（3） 2016（2） 2017（2） 2020（2）
申请年 2013（11）  2011（9）  2010（6）  2014（5）  2012（3）  2015（3）  2022（3）  2016（2） 
专利权人 SAMSUNG ELECTRONICS CO LTD（46）

Manufacturing electronic device such as logic or memory device, involves preparing substrate including channel element, depositing carbon layer on channel element, depositing ferroelectric layer on carbon layer, depositing gate electrode on ferroelectric layer, and crystallizing.

SHIN H, SHIN K, JO S, LEE Y, HEO J

Electronic device has substrate having channel between source and drain, gate electrode and film structure with first ferroelectric layer, crystallization barrier layer and second ferroelectric layer sequentially on channel, where average sizes of crystal grains of ferroelectric layers, is preset.

LEE J, LEE E, BAE H, MOON T, NAM S, JO S, LEE H, LEE Y, HEO J, LI Z, LI Y, XU Z

Electronic device used in ferroelectric materials, comprises channel between source and drain, gate electrode on substrate and facing channel, ferroelectric thin film structure between channel and gate electrode, crystallization barrier layer has dielectric material and second ferroelectric layer.

LEE J, LEE E, BAE H, MOON T, NAM S, JO S, LEE H, LEE Y, HEO J, HEO J S, LEE Y S, LEE H S, NAM S G, MOON T H, YOUL B, HA L, HO L J

Electronic device is a semiconductor-based device such as logic device or a memory device, has substrate, and channel element, and channel element is provided as a channel layer on substrate and separate from substrate.

SHIN H, SHIN K, JO S, LEE Y, HEO J

Graphene device e.g. multifunctional device of switching device or electronic device, has gate that faces functional layer with graphene layer, and gate insulation layer that is formed between graphene layer and gate.

HEO J, LEE K, PARK S

Electronic device e.g. memory device, has carbon layer having bond structure formed between substrate and ferroelectric layer, comprises nanocrystalline graphene including nano-sized crystals.

HEO J, LEE Y, JO S, SHIN K, SHIN H, XU Z, LI R, ZHAO C, SHEN J, SHEN X, HEO J S, LEE Y S, SHIN K W, SHIN H J

Optical sensor comprises first electrode, graphene quantum dot layer, graphene quantum dot layer which comprises multiple of first graphene quantum dots which are bonded to first functional group and multiple of second graphene quantum dots.

LEE J, SHIN H, LEE D, PARK S, LEE K, LEE E, JO S, HEO J, LEE G, LI Y, ZHAO C, HUH J, LEE J H, SHIN H J, LEE D W, PARK S J, LEE K Y, LEE E K, JO S H, HEO J S

Photodetector for use as light-receiving device, has second graphene layer that is set on 2D material layer, and first electrode that is set on first graphene layer, and second electrode that is set on second graphene layer.

HEO J, PARK S, LEE K, LEE S, LEE E, LEE J, HEO J S, PARK S J, LEE K Y, LEE S Y, LEE E K, LEE J H

Graphene electronic device e.g. sensor, has source electrode placed on one and another end of channel layer including semiconductor and graphene layer which includes graphene islands spaced apart from each other.

LEE K, HEO J, YU W, SHIN Y, HEO J S, LEE K Y, SHIN Y S, YU W J

Fin-type graphene device i.e. graphene FET, for e.g. optical sensor, has gate electrode placed on gate insulating layer, and source electrode and separate drain electrode that are placed on side surface of graphene channel layer.

LEE M, LEE J, HEO J, LEE K, LEE M H, LEE J H, HEO J S, LEE K Y