国家/地区 美国（18） 韩国（13） 中国（4） 欧洲专利局（EPO）（3） 日本（3）
IPC部 H（16） C（8） B（2）
IPC大类 H01（15） C01（7） C23（6）
B82（2）
IPC小类 H01L（13） C01B（7） C23C（6）
B82Y（2） H01M（2）
IPC H01L029/16（9） C01B032/186（7） H01L021/02（7）
C23C016/26（6） H01L023/532（5） C23C016/02（4）
C23C016/511（3） H01L021/324（3） H01L021/768（3）
H01L023/522（3） H01L029/06（3） H01L029/66（3）
B82Y030/00（2） C23C016/50（2） C23C016/513（2）
发明人 SHIN H（15） SHIN H J（12） SHIN K（12）
SHIN K W（11） BYUN K（9） BYUN K E（9）
LEE C（8） SONG H（8） CHO Y（7）
KIM C（7） LEE C S（7） SONG H J（7）
CHO Y C（6） NAM S（6） JUNG A（5）
公开年 2020（18）
申请年 2020（8）  2019（7）  2018（3） 
专利权人 SAMSUNG ELECTRONICS CO LTD（18）

Formation of graphene for metal wiring for semiconductor device, involves directly growing graphene on non-catalyst substrate based on injecting reaction gas comprising carbon source having preset ionization energy, into reaction chamber.

SONG H, LEE E, LEE C, KIM C, BYUN K, SHIN K, SHIN H, SONG H J, LEE C S, BYUN K E, SHIN K W, SHIN H J

Graphene structure for e.g. static RAM, has silicon substrate whose surface is arranged with graphene, where material of substrate and carbon of graphene are covalently bonded and arranged between substrate surface and graphene.

LEE E, BYUN K, SONG H, SHIN H, KIM C, SHIN K, LEE C, JUNG A, BYUN K E, SONG H J, SHIN H J, SHIN K W, LEE C S, JUNG A R

Wiring structure for use in electronic device e.g. memory device, has nanocrystalline graphene layer which is provided on substantial entirety of conductive material layer, seed layer is provided on another conductive material layer.

LEE C, SHIN H, PARK S, IM D, PARK H, SHIN K, LEE J, LIM H

Interconnect structure for use in electronic device, has graphene-metal barrier arranged on substrate, where graphene-metal barrier includes graphene layers and metal particles on grain boundary of graphene layers and between layers.

SHIN K, KIM K, KIM H, SHIN H, LEE S, SHIN K W, KIM K B, MI K H, SHIN H J, LEE S H

Crystalline graphene used in display device, is obtained by performing thermal treatment involving supplying heat to inorganic substrate, introducing vapor carbon supply, and binding activated carbon to grow crystalline graphene.

SHIN H, CHOI J, WOO Y, YOON S

Pre-treatment of substrate e.g. non-metal substrate such as semiconductor substrate or dielectric substrate used for forming graphene directly, involves using pre-treatment gas including carbon source and hydrogen.

SHIN K, LEE J, NAM S, SHIN H, LIM H, JUNG A, BYUN K, CHO Y, SHIN K W, LEE J H, NAM S G, SHIN H J, LIM H S, JUNG A R, BYUN K E, LEE J I, CHO Y C

Layer structure for use in diffusion barrier layer and a nanocrystalline graphene layer applied to an electronic device, comprises diffusion barrier layer on the first material layer, diffusion barrier layer edge aligns substantially.

SONG H, NAM S, CHO Y, PARK S, SHIN H, LEE J

Composite particulates used for lithium-ion battery, comprise active material particles and graphene sheets provides electron-conducting path, which surrounds active material particles and surface of composite particulates.

ZHAMU A, SHI J, CHEN G, FANG Q, JANG B Z

Graphene device e.g. multifunctional device of switching device or electronic device, has gate that faces functional layer with graphene layer, and gate insulation layer that is formed between graphene layer and gate.

HEO J, LEE K, PARK S

Composite conducting agent used for forming electrode for lithium secondary battery, comprises carbonaceous conductive material, and graphene-silica composite comprising matrix comprising graphene and silicon suboxide and/or silicon dioxide.

KIM M, SON I, MAH S, LEE J, LIM M, CHOI J, HAN S, JIN M, SUN Y, MA X, LI Z, LIN M, CUI Z, MAH S K, LIMMINWOO, HYEON C