国家/地区 美国（43） 韩国（33） 中国（14） 欧洲专利局（EPO）（8）
IPC部 H（41） C（11） B（5）
G（4）
IPC大类 H01（40） H10（10） C23（8）
C01（5） B23（2） B82（2）
C08（2）
IPC小类 H01L（37） H10B（10） C23C（8）
C01B（5） H01M（3） B82Y（2）
IPC H01L021/02（16） H01L029/16（9） H01L029/423（8）
H01L029/66（8） H01L029/786（8） H01L021/768（7）
H01L029/78（7） H01L021/285（6） H01L023/532（6）
H01L029/40（6） C23C016/26（5） H01L029/06（5）
H01L029/08（5） H01L029/417（5） H01L029/51（5）
发明人 SHIN K（15） BYUN K（12） SHIN K W（12）
LEE C（11） SHIN H（11） BYUN K E（10）
LEE C S（10） KIM S（9） KIM C（8）
KIM H（6） JIN C（5） KIM K（5）
LEE E（5） LEE J（5） SEOL M（5）
公开年 2023（46）
申请年 2022（35）  2021（8）  2023（3） 
专利权人 SAMSUNG ELECTRONICS CO LTD（46）

Graphene structure for use in semiconductor device, comprises substrate, graphene on surface of substrate, and bonding region, where material of substrate and carbon of the graphene are covalently bonded, between surface of substrate and graphene, where bonding region has silicon carbide.

JUNG A, LEE C, SHIN K, KIM C, SHIN H, SONG H, BYUN K, LEE E

Complex of heterogeneous two-dimensional materials used in electronic device, comprises substrate, first two-dimensional material layer having two-dimensional crystal structure on substrate, and second two-dimension material layer.

SEOL M, SHIN H, BYUN K, HWANG H, LEE C, KIM H, SUK S H, BYUN K E, HWANGHYUNTAE, LEE C S, KIM H J, JIN J, LI C

Electronic device e.g. semiconductor memory device, for use in memory system, has gate oxide layer formed between resistance switching layer and gate, source and drain that are arranged on switching layer and spaced apart from each other, and color filter arranged on switching layer.

SHIN H, KIM H, HINTON H J, LIU C, HAM D, JANG H, LEE M

All All-solid-state secondary battery, preferably lithium battery, comprises anode active material layer on anode current collector, and metal layer formed between anode active material layer and anode current collector, where metal layer comprises lithium or lithium alloy.

AIHARA Y, YAMADA T, YASHIRO N, SUZUKI N

Semiconductor device comprises substrate, first heat dissipation layer provided on substrate and extending in first direction, and metal layer provided on first heat dissipation layer and extending in first direction, and first heat dissipation layer has structure made of carbon atoms.

JEONG M H, RHO H, LEE S H, RHO H K, CHUNG M H

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Micro light emitting semiconductor device for display apparatus, has first and second semiconductor layers, light emitting layer and color conversion layer with porous layer having quantum dot, where doping-type of second semiconductor layer is different from doping-type of color conversion layer.

HWANG J, PARK J, HWANG K, KIM D, HWANG K W, HWANG J S, JIN D

Fabricating semiconductor device involves loading substrate with structure having opening, into process chamber, forming two-dimensional material layers on upper surface of structure, to overlie opening and form air-gap, where upper portion of air-gap, is defined by two-dimensional material layers.

SHIN K, LEE S, YOON J, AN S, LI Z, YOUN J, AN X, AHN S J, SU Y J, LEE S Y, SHIN K W

Nonvolatile memory device for neuromorphic apparatus, has gate insulating layer extending in first direction between channel layer and gate electrodes, where each of gate electrodes includes metal-doped graphene.

SHIN K, KIM C, PARK S, KIM H, BYUN K, YUN D, LEE C, LI C, YIN T, PIAO S, JIN C, SHIN K W, PARK S H, KIMHYUNWOO, BYUN K E, JIN Y D, LEE C S

Ideal electronic device comprises coating layer coated on at least portion of surface of component, polymer and conductive filler, where conductive filler is graphene nano-tube.

HONG J M, JEONG M K, KO Y D, SHIN J E, SOO L J, JEONG K H