国家/地区 中国（37） 世界知识产权组织（3） 美国（2）
IPC部 C（22） H（15） A（3）
B（2）
IPC大类 C01（17） H01（15） C23（8）
A61（2） B82（2） C30（2）
IPC小类 C01B（17） H01L（15） C23C（8）
A61L（2） B82Y（2） C30B（2）
IPC C01B031/04（9） C01B032/186（7） C23C016/26（7）
H01L021/02（6） C01B032/194（5） H01L021/28（4）
C23C014/48（3） C23C014/58（3） H01L021/285（3）
H01L029/16（3） H01L029/423（3） A61L027/06（2）
B82Y030/00（2） C23C014/18（2） C23C014/30（2）
发明人 DI Z（37）
公开年 2018（7） 2015（6） 2017（5） 2021（5） 2014（3） 2016（3） 2012（2） 2013（2） 2023（2）
申请年 2015（10）  2018（5）  2021（5）  2013（4）  2014（3）  2016（3）  2012（2）  2023（2） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（37）

Transferring graphene involves growing graphene layer on substrate, depositing stress layer on graphene layer, spin-coating bonding glue on stress layer, attaching rigid substrate, peeling rigid substrate followed by performing Vander Waals bonding on laminated structure, and etching stress layer.

TIAN Z, XUE Z, ZHANG M, DI Z, JIANG H

Preparing radio frequency transistor with self-aligned structure comprises growing graphene layer on upper surface of substrate, spin coating two photoresist, depositing aluminum and gold form self-aligned structure, spin coating transfer glue, attaching transition substrate and cleaning.

XUE Z, TIAN Z, ZHANG M, DI Z, JIANG H

Method for integrating of thin film material, involves forming functional material layer on upper surface of graphene layer, forming rigid temporary substrate layer on upper surface of graphene layer, and forming temporary bonding glue layer on surface of rigid temporary substrate layer.

ZHANG M, XUE Z, JIANG H, TIAN Z, LIU G, DI Z

Method for realizing dry transfer graphene continuous film, involves pressing PVA film on heterjunction at first preset temperature by using PVC film, and selecting second preset temperature as hardening temperature of PVA film.

XUE Z, GUO W, DI Z

Manufacturing transistor structure involves forming graphene layer on an upper surface of substrate, and forming source/drain electrode layer on upper surface of graphene layer.

DI Z, LIU G, XUE Z, TIAN Z, ZHANG M

Method for preparing top gate structure for semiconductor structure, involves mechanically peeling laminated structure, transferring stacked structure to target substrate, and removing support layer.

DI Z, LIU G, XUE Z, TIAN Z, ZHANG M

Method for preparing electrode layer in semiconductor structure, involves providing substrate, forming graphene layer on upper surface of substrate, forming electrode layer on upper surface of graphene layer, and removing supporting layer.

DI Z, LIU G, XUE Z, TIAN Z, ZHANG M

Method for manufacturing dielectric material and semiconductor structure, involves transferring laminated structure to target substrate, removing supporting layer, and leaving dielectric material layer on surface of target substrate.

DI Z, LIU G, XUE Z, TIAN Z, ZHANG M

Method for manufacturing graphene nanometer belt device array, has electrode areas exposed at both ends of graphene nano-ribbon array to keep electrodes in electrode area such that fabrication of graphene nano-ribbon array is completed.

ZHANG M, WANG Y, LI P, XUE Z, DI Z

Method for directly preparing graphene quantum dot array on insulating substrate, involves subjecting germanium quantum dot array in structure to oxidative volatilization treatment to remove germanium quantum dot array.

DI Z, ZHENG P, DONG L, XUE Z