国家/地区 中国（13）
IPC部 H（7） C（5） G（4）
B（2）
IPC大类 H01（7） C01（4） G01（4）
B82（2） C23（2）
IPC小类 H01L（6） C01B（4） G01N（4）
B82Y（2） C23C（2）
IPC H01L021/28（3） B82Y040/00（2） C01B032/184（2）
C01B032/194（2） G01N027/30（2） H01L021/02（2）
H01L021/285（2） H01L029/423（2）
发明人 DI Z（5） XUE Z（5） LIU G（4）
TIAN Z（4） ZHANG M（4） LI X（3）
WANG X（3） XU P（3） DING G（2）
LI M（2）
公开年 2021（13）
申请年 2021（13）
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（13）

Characterization of graphene on platinum substrate for e.g. device fabrication, involves coating methylene blue developer on platinum substrate covered with graphene, passing in hydrogen-containing gas, vacuuming, observing substrate color and removing residue of developer.

CHEN Z, ZHANG Y, YU G, KANG H

Preparing two-dimensional compound semiconductor thin film useful in micro-nano electronic device, comprises placing insulating substrate with single-layer two-dimensional layered material/metal oxide film vertical heterostructure on surface in heating device, and introducing carrier gas.

SHI Z, ZHANG C, ZHU H, WU T, GAO B

Low temperature magnetic superconducting mixed storage unit for use in memory, comprises voltage regulation and control magnetic anisotropy magnetic tunnel junction with reference layer, barrier layer and free layer overlapped in sequence.

CHEN X, DONG Y, WANG C

Method for realizing dry transfer graphene continuous film, involves pressing PVA film on heterjunction at first preset temperature by using PVC film, and selecting second preset temperature as hardening temperature of PVA film.

XUE Z, GUO W, DI Z

Modified electrode used for detecting content of formaldehyde in test liquid by electrochemical detection process, has electrode, where working area of electrode is covered with composite material layer.

WANG X, SU L, SHI J, XU P, LI X

Paramagnetic chiral graphene quantum dot useful for monitoring interaction between chiral molecules, comprises e.g. chiral graphene quantum dots and chelating agent form covalent bond through mutual functional group reaction.

DONG H, LI Y, YANG S, TAO Q, DING G, XIE X

Manufacturing transistor structure involves forming graphene layer on an upper surface of substrate, and forming source/drain electrode layer on upper surface of graphene layer.

DI Z, LIU G, XUE Z, TIAN Z, ZHANG M

Method for preparing top gate structure for semiconductor structure, involves mechanically peeling laminated structure, transferring stacked structure to target substrate, and removing support layer.

DI Z, LIU G, XUE Z, TIAN Z, ZHANG M

Method for preparing electrode layer in semiconductor structure, involves providing substrate, forming graphene layer on upper surface of substrate, forming electrode layer on upper surface of graphene layer, and removing supporting layer.

DI Z, LIU G, XUE Z, TIAN Z, ZHANG M

Method for manufacturing dielectric material and semiconductor structure, involves transferring laminated structure to target substrate, removing supporting layer, and leaving dielectric material layer on surface of target substrate.

DI Z, LIU G, XUE Z, TIAN Z, ZHANG M