国家/地区 中国（18）
IPC部 C（13） H（5） A（3）
IPC大类 C01（10） H01（5） C23（3）
A61（2）
IPC小类 C01B（10） H01L（5） C23C（3）
A61L（2）
IPC C01B031/04（6） C01B032/186（4） H01L021/02（3）
A61L027/06（2） C23C016/26（2） H01L021/265（2）
H01L021/324（2）
发明人 WANG G（18）
公开年 2015（5） 2017（4） 2014（3） 2016（3） 2013（2）
申请年 2015（8）  2013（4）  2014（3）  2016（3） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（18）

Graphene growth method used for increasing the nucleation density of graphene, involves providing germanium substrate, performing ion implantation on germanium substrate, annealing, providing carbon source and growing.

DI Z, MA J, ZHANG M, WANG G, JIA P, WANG Z, WANG X

Preparing directly layer of controllable graphene on insulating substrate comprises forming insulating substrate on first metal layer, injecting carbon ions, forming second metal layer on surface of first metal layer and annealing.

DI Z, WANG Z, WANG G, ZHENG X, DAI J, XUE Z, ZHANG M, WANG X

Preparation of continuous single layer graphene on insulating substrate by providing insulating substrate, depositing germanium film on insulating substrate, using germanium film as catalyst and growing graphene at high temperature.

DI Z, WANG Z, DAI J, WANG G, ZHENG X, XUE Z, ZHANG M, WANG X

Preparation of patterned graphene involves providing insulating substrate, depositing germanium film on insulating substrate, etching desired pattern in germanium film, forming patterned germanium film, and continuously evaporating.

DI Z, WANG Z, DAI J, WANG G, ZHENG X, XUE Z, ZHANG M, WANG X

Preparation of germanium-based graphene nanopore by providing germanium-based graphene, performing ion implantation on germanium-based graphene, generating point defects in graphene and annealing to etch point defects.

DI Z, MA J, ZHANG M, XUE Z, JIA P, WANG Z, WANG G, WANG X

Method for modifying surface of medical titanium material, involves preparing graphene film on surface of medical titanium material.

DI Z, WANG G, LI J, LIU X, CHEN D, GUO Q, MA J, XUE Z, ZHANG M

Photo-resist graphene removing method, involves forming silicon nitride layer on photo-resist graphene part, performing photo-resist acetone leaching part removing process, and performing photo-resist graphene removing process.

DI Z, JIA P, MA J, WANG G, WANG X, XUE Z, ZHANG M, ZHENG X

Doped graphene preparing method, involves forming nickel thin film layer on copper substrate, and N-type graphene and P-type doped graphene formed respectively on N-type doped element-rich area and P-type doped element-rich zone.

DI Z, CHEN D, DING G, GUO Q, MA J, WANG G, XIE X, XUE Z, ZHANG M, ZHENG X, DAI J

Preparing graphene on insulator by placing germanium catalyst substrate in growth chamber, introducing hydrogenous atmosphere to form germanium-hydrogen bond, heating substrate, and performing microwave treatment.

DI Z, JIA P, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J

Preparation of wrinkle-free graphene involves subjecting catalytic substrate to ion injection, forming discrete end injection units at catalytic substrate, and heating catalytic substrate in growth chamber.

DI Z, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J, WANG Z