国家/地区 美国（11）
IPC部 C（8） B（5） H（4）
G（3）
IPC大类 C01（8） C23（6） B82（4）
C30（4） H01（4） G01（3）
IPC小类 C01B（8） C23C（6） B82Y（4）
C30B（4） H01L（4） G01N（3）
IPC C01B031/04（5） B82Y040/00（4） C01B032/186（4）
C23C016/26（4） B82Y030/00（2） C01B032/182（2）
C23C016/02（2） C23C016/50（2） C30B029/02（2）
H01L021/04（2） H01L029/78（2）
发明人 XIE X（5） DING G（4） JIANG M（3）
TANG S（3） WANG H（3） DI Z（2）
LI T（2） LIANG C（2） WANG X（2）
WANG Y（2） WU T（2） XIE H（2）
ZHANG Y（2）
公开年 2012（3） 2017（2）
申请年 2011（3）  2021（2） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（11）

Preparing patterned graphene, comprises forming accommodating passage in silicon carbide base, providing catalyst and insulating substrate, placing catalyst in accommodating passage, and placing sandwich structure in heating device.

GAO B, ZHANG C, GU J, WU T, ZHU H

Characterization of graphene on platinum substrate for e.g. device fabrication, involves coating methylene blue developer on platinum substrate covered with graphene, passing in hydrogen-containing gas, vacuuming, observing substrate color and removing residue of developer.

CHEN Z, ZHANG Y, YU G, KANG H

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Manufacture of gas sensor for nitrogen oxide, involves placing microheater platform substrate having graphene-covered surface, to chemical vapor deposition reactor, injecting inert gas, hydrogen and sulfur source gas, reacting and cooling.

LI T, GUO L, LIANG C, WANG Y

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Method for doping sulfur on graphene involves placing graphene in chemical vapor deposition reaction chamber, introducing sulfur source gas to perform sulfur doping on graphene and cooling hydrogen and inert gas atmosphere.

LI T, LIANG C, WANG Y

Graphene modulated high-k metal gate germanium-based MOS device manufacturing method, involves forming graphene thin film on Germanium-based substrate, and forming high-k gate dielectric on surface metal electrode.

DI Z, WANG G, WANG X, ZHANG M, ZHENG X

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X

Manufacture of graphene nano belt for electric component, involves preparing single atom layer and forming layer on insulating substrate, and directly growing.

CHEN J, DING G, JIANG M, TANG S, WANG C, XIE X

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X