国家/地区 美国（9） 中国（4） 台湾（4）
IPC部 H（9） G（4） C（2）
IPC大类 H01（9） G03（4） C23（2）
IPC小类 H01L（9） G03F（4） C23C（2）
IPC G03F001/62（4） H01L021/033（4） H01L029/66（4）
G03F001/64（3） H01L021/02（3） H01L029/16（3）
C23C014/16（2） C23C014/18（2） C23C016/26（2）
C23C028/00（2） G03F001/22（2） H01L029/06（2）
H01L029/423（2） H01L029/786（2）
发明人 LIN C（3） LIN Y（3） LIN Z（3）
CHEN C（2） LEE H（2） LI X（2）
TU C（2） YANG C（2）
公开年 2017（5） 2018（3）
申请年 2016（9）
专利权人 TAIWAN SEMICONDUCTOR MFG CO LTD（9）

Method for fabricating pellicle in semiconductor industry, involves performing etching process to rear surface of substrate to form pellicle including pellicle membrane that includes graphene layer while using first dielectric layer as mask.

LIN Y, CHEN H, LIN C, LEE H, KU Y, LO W, YEN A, CHIEN M, CHEN X, LIN Z, LI X, GU Y, LUO W, YAN T, LIN J, QIAN Z, CHIEN M Z

Method of making a pellicle for use in extreme ultraviolet (EUV) lithography system, by depositing graphene layer over first material layer, and depositing amorphous silicon layer over graphene layer.

TU C, CHEN C, YOO C S, CHANG J, TSAI C, LIU P, LEE H, LIN C, LIN Y, TU Z, CHEN J, CAI J, YOU Q, ZHANG Z, LIN Z, LIU B, LI X, YOO C

Graphene pellicle method for extreme ultraviolet lithography, involves attaching carrier to graphene layer, removing substrate from first assembly, and removing first material layer from first assembly.

TU C, CHEN C

Method for fabricating semiconductor device, involves performing annealing process that serves to convert carbon-containing layer into graphene layer, after depositing metal layer.

CHEN M, PAN S C, HSIEH C

Semiconductor device for electronic application e.g. personal computer, has first insulating layer that is formed over first portion of first graphene layer.

YANG T, BAO T, LIN T, CHU W, YANG D, ZHU W

Method for manufacturing pellicle, involves forming oxide layer over supporting substrate, forming metal layer over oxide layer, forming graphene layer over metal layer, and removing portion of supporting substrate and oxide layer.

MA J, WU T, YANG C, CHERN C S, LIN C, LIN Y, MA Z, WU X, YANG Q, CHEN Q, LIN Z, CHERN C

Method for fabricating gate-all-around (GAA) device for manufacturing semiconductor integrated circuit, involves extending nanobar in direction parallel to horizontal plane and normal to vertical plane defined by graphene layer.

YANG C, LIU C, LIN H, YEH L

Semiconductor device, has graphene channel fixed between first and second source/drain regions, and substrate whose top surface lies in first plane, where bottom surfaces of first source/drain region and gate lie in second plane.

LIN M, LIN S, LEE S

Method for manufacturing carbon layer for semiconductor device, involves forming active device on device substrate, and graphene layer forming conductive layer of active device.

VAN D M