国家/地区 美国（19） 台湾（9） 中国（7）
IPC部 H（16） C（6） G（6）
IPC大类 H01（15） C01（5） G03（4）
H04（2）
IPC小类 H01L（15） C01B（5） G03F（4）
IPC H01L021/768（7） H01L023/532（7） C01B032/182（5）
H01L023/522（4） H01L029/78（4） H01L021/02（3）
H01L029/16（3） H01L029/66（3） G03F001/24（2）
G03F001/48（2） G03F001/62（2） H01L023/00（2）
H01L023/373（2） H01L023/528（2） H01L025/00（2）
发明人 LEE M（5） SHUE S（5） YANG S（5）
LIN C（4） HSU P（3） CHAN Y（2）
CHEN T（2） CHIANG Y（2） GAO C（2）
GAU T（2） HSIEH Y（2） HUANG C（2）
HUANG J（2） KHADERBAD M A（2） KO T（2）
公开年 2022（19）
申请年 2022（11）  2021（7） 
专利权人 TAIWAN SEMICONDUCTOR MFG CO LTD（19）

Transistor for semiconductor device, has channel layer that comprises graphene layer and hexagonal boron nitride sheets dispersed in graphene layer and arrangement directions of hexagonal boron nitride sheets that are aligned and source/drain region next to gate stack that is obtained.

CHEN Z, CHU Z, CHEN T, CHUU C

Semiconductor structure used in semiconductor device, has first graphene layer extending along top surface of the via; and metal line spanning graphene layer, where metal line includes line width decreasing as distance from graphene layer increases, and top surface of graphene layer is higher.

SHUE S, LEE M, YANG S

Intraconnection structure useful in a post-section process of an integrated circuit i.e. semiconductor device, has second portion of conductive layer adjacent to first portion of conductive layer, and dielectric material contacts first interface portion and third interface portion.

MU X, LI M, YANG S, ZHAN Y, LI S, SHUE S, LEE M, CHAN Y

Integrated chip comprises substrate, first conductive component above substrate and second conductive component, upper portion of substrate and transversely adjacent to first conductive component where concave hole transversely separating first conductive component and second conductive component.

SUI X, LI M, CHUNG C, LU M, YANG S, SHUE S, LEE M

Protection assembly for use during optical lithography patterning process, has outer surface and inner surface, which are connected with each other, where conformal coating is formed on outer surface of protective film.

LIN J, GAO C, LI X, LIAN D, XU B, HSU P, LIEN T, LEE H, GAU T, LIN C

Semiconductor device, comprises substrate and fin structure on substrate, and includes epitaxial region, etch stop layer on epitaxial region, interlayer dielectric layer on etch stop layer, and metal contact through etch stop layer and interlayer dielectric layer.

SHEN T, HUANG J, CHEN S, LIN H, LIN C, WOON W, KHADERBAD M A

Semiconductor device e.g. metal oxide semiconductor field effect transistor, comprises graphene film that covers top surface and sidewalls of epitaxial region and covers bottom surface and side walls of metal contact.

WOON W, KHADERBAD M A

Forming at least one resistive memory array over substrate involves forming word line on each of layer stacks within unfilled volumes of line trenches, where lower bit lines comprise carbon-based conductive material containing hybridized carbon atoms, upper bit lines comprise conductive material.

LI L, CHEN T, CHENG C, CHIANG H

Method for forming thin film assembly of film-shaped object, such as semiconductor wafer, involves reducing thickness of film to obtain thin film, and stretching membrane using stretching frame to obtain extended membrane.

LIN J, GAO C, CHEN L, LIAN D, XU B, LI X, LIN C, GAU T, LIEN T, HSU P, LEE H

Photomask used in semiconductor industry, comprises substrate, and polymer layer over surface of substrate, where polymer layer comprises thermoplastic polymer and hydrophobic layer, and thermoplastic polymer is set between hydrophobic layer and surface of photomask.

LIN C, WEN C, LIU T H