国家/地区 日本（22）
IPC部 C（21） H（18） B（7）
IPC大类 H01（17） C01（16） C23（14）
B01（6） H05（4）
IPC小类 H01L（17） C01B（16） C23C（14）
B01J（6） H01J（6） H05H（3）
IPC C23C016/26（11） C23C016/02（7） C01B031/02（6）
C01B031/04（6） C01B032/182（6） C01B032/186（6）
C23C016/511（6） H01L021/02（6） H01L021/67（6）
H01L021/768（6） H01L023/532（6） C23C016/455（5）
H01J037/32（5） H01L021/205（5） H01L021/28（5）
发明人 MATSUMOTO T（20） IFUKU R（12） WADA M（4）
KAGAYA M（3） NISHIDE D（3） KABUKI N（2）
KASHIWAGI Y（2） MATSUMOTO TAKASHI（2） RYOTA I（2）
SUGIURA M（2） TAKASHI M（2） UEDA H（2）
公开年 2018（4） 2021（4） 2014（3） 2013（2） 2017（2） 2023（2）
申请年 2018（3）  2020（3）  2022（3）  2013（2）  2014（2）  2015（2）  2016（2） 
专利权人 TOKYO ELECTRON LTD（22）

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Processing substrate involves carrying substrate having silicon-containing film on surface of substrate into processing container, forming adsorption layer, forming silicon oxide layer, and forming graphene film on silicon oxide layer by supplying carbon-containing gas into processing container.

FURUYA H, YAMADA H, IFUKU R, MATSUMOTO T, WADA M, HARUHIKO F A

Upper electrode assembly used in plasma processing apparatus, has heat transfer sheet that is mounted between electrode plate and metal plate and having vertically oriented portion with vertically oriented graphene structures.

TSUJIMOTO H, KOBUNE T, LI L, LEE L, KOBUNEDAKAKI

Method for forming film e.g. graphene film on substrate, involves supplying aromatic hydrocarbon gas having functional group, to substrate on which base film is formed, and activating aromatic hydrocarbon gas adsorbed on surface of base film by plasma of reaction gas containing rare gas.

MATSUMOTO T, IFUKU R

Formation of film involves preparing substrate containing conductive film formed on base substrate, forming composite layer containing graphene layer, and electrically connecting conductive film with former film through composite layer.

NI Z, MATSUMOTO T, IFUKU R, YOU W

Film forming by cleaning interior of treatment container, extracting and removing oxygen inside treatment container, introducing substrate into treatment container, and forming carbon film on substrate by plasma chemical vapor deposition.

MAKOTO W, TAKASHI M, NOBUTAKE K, RYOTA I, MASAHITO S, HIROKAZU U, MATSUMOTO T, KABURAGI N, IFUKU R, SUGIURA M, UEDA H, WADA M, KABUKI N

Processing device for forming film, consists of processing container having thermal sprayed ceramic coating on inner wall, mounting table for holding substrate and control unit for performing precoating and film forming.

WADA M, MATSUMOTO T, SUGIURA M, IFUKU R, UEDA H, KURYOTA L

Manufacture of graphene structure used for wiring, involves preparing substrate to be processed, and forming graphene structure on substrate surface by plasma chemical vapor deposition using plasma of process gas containing oxidizing gas.

RYOTA I, TAKASHI M, IFUKU R, MATSUMOTO T

Method for processing substrate of MOSFET during manufacturing of integrated circuit, involves providing planarized substrate, followed by selectively depositing silicon dioxide film on first material and removing graphene layer.

TAPILY K N, MATSUMOTO T, KASHIWAGI Y, LEUSINK G J

Planarizing irregularities in graphene layer surface formed on substrate, comprises planarizing graphene layer by removing convex portion by anisotropically etching using plasma etching in in-plane direction from edge portion of graphene.

IFUKU R, HIGUCHI H, MATSUMOTO T