国家/地区 中国（47）
IPC部 H（29） C（23） G（2）
IPC大类 H01（29） C01（14） C04（7）
C23（4） C30（3） G01（2）
IPC小类 H01L（29） C01B（14） C04B（7）
C23C（4） C30B（3） G01R（2）
IPC C01B031/04（13） H01L021/336（8） C04B041/50（7）
C04B041/85（7） H01L029/786（7） H01L021/205（6）
H01L021/04（5） H01L021/324（5） H01L029/78（5）
C23C016/26（3） H01L021/02（3） H01L029/423（3）
C30B025/18（2） C30B029/02（2） H01L029/16（2）
发明人 GUO H（24） LEI T（24） ZHANG Y（24）
ZHANG C（16） ZHANG K（16） CHAI Z（15）
HAN D（15） HAO Y（15） NING J（15）
WANG D（15） YAN Y（15） ZHANG J（15）
ZHAO Y（10） HU Y（9） MA Z（8）
公开年 2013（47）
申请年 2012（28）  2013（18） 
专利权人 UNIV XIDIAN（47）

Graphene FET has source electrode and drain electrode that are respectively located at two ends of graphene channel layer.

ZHANG P, BAO J, MA Z, WU Y, ZHUANG Y, ZHANG C

Carbon nano-tube probe tip, has probe tip main body provided with thin film that is made of graphene material.

ZHANG P, BAO J, MA Z, WU Y, ZHUANG Y, CHEN Q

Graphene nano-belt FET, has gate dielectric layer placed at upper and lower sides of channel layer, substrate formed with gate dielectric layer, and source electrode and drain electrode placed at two ends of channel layer.

ZHANG P, BAO J, MA Z, WU Y, ZHUANG Y, ZHANG C

Large-size stacked structure of graphene wafer used in e.g. silicon-based semiconductor device, is provided with single crystal graphene layer, boron nitride layer, single crystal boron nitride layer and silicon dioxide wafer substrate.

GUO C, MA Z, ZHANG P, WU Y, ZHUANG Y, XIAO Z, FENG Y, ZHAO Y

Multi-layer graphene double-grid FET for use in high frequency large power device, has transistor unit formed with multiple layers, where source and drain electrodes of transistor unit are connected together in parallel manner.

GUO C, MA Z, ZHANG P, WU Y, ZHUANG Y, XIAO Z, FENG Y, ZHAO Y

Graphene nanoribbon FET comprises gate dielectric layers that are respectively located at upper side and lower side of channel layer, and source and drain electrodes that are respectively located at ends of channel layer.

ZHANG P, WU Y, BAO J, MA Z, ZHUANG Y, ZHANG C

Preparation of graphene on silicon carbide substrate used for manufacturing microelectronic devices and biological sensors, involves washing silicon carbide substrate, and placing in graphene growth device with argon gas and chlorine.

GUO H, LEI T, ZHANG Y, ZHANG C, LING X

Preparation of wide graphene silicon-based substrate grating used as copper film annealing graphene involves chemical vapor deposition, carbonization, growing silicon carbide hetero-epitaxial film, depositing copper film and annealing.

GUO H, LEI T, LIU J, ZHANG Y, HU Y

Preparation of large-area graphene used for manufacturing microelectronic devices and biological sensors, involves cleaning silicon substrate, placing in deposition reaction chamber, introducing propane and silane gas, and annealing.

GUO H, LEI T, LIU J, ZHANG F, ZHANG Y

Preparation of large-area graphene used for biological, optical and electrical sensor, involves cleaning silicon carbide, heating, carrying out hydrogen etching treatment, mixing argon and carbon tetrachloride, plating and annealing.

GUO H, LEI T, LIU J, ZHANG Y, ZHANG C