国家/地区 中国（16）
IPC部 H（14） C（4） G（3）
IPC大类 H01（13） C01（2） C30（2）
IPC小类 H01L（13） C01B（2） C30B（2）
IPC H01L033/00（7） H01L031/18（4） H01L021/02（3）
H01L031/0352（3） H01L033/06（3） H01L033/32（3）
C01B032/186（2） C01B032/194（2） H01L031/0304（2）
H01L033/12（2） H01L033/42（2）
发明人 CHEN Y（16）
公开年 2020（4） 2021（4） 2022（3） 2023（3）
申请年 2020（6）  2022（4）  2021（3） 
专利权人 CHANGCHUN INST OPTICS FINE MECHANICS P（16）

Van der Waals epitaxy method of high-quality aluminum gallium nitride materials on amorphous substrate, comprises e.g. transferring and processing first two-dimensional material layer on amorphous substrate, transferring second material layer on processed layer, performing hydrogenation passivation.

LI D, JIANG K, BEN J, ZHANG S, CHEN Y, LYU B, SUN X

Semiconductor epitaxial structure based on double-layer metal micro-nano and graphene complex structure comprises a substrate, an aluminum nitride layer, an N-aluminum gallium nitride layer, an aluminum gallium nitride multi-quantum well, and graphene layer.

BEN J, JIANG K, SUN X, CHEN Y, JIANG N, LI D

Method for preparing two-dimensional nanometer patterned substrate in material synthesis technology field, involves preparing metal nano-particles on surface of graphene etching graphene nano-particle mask etching pattern, and removing metal nano-particle mask on graphene.

LIU M, ZANG X, LV S, ZHANG S, JIA Y, BEN J, JIANG K, LI D, CHEN Y, SUN X

Method for preparing deep-UV LEDs, involves preparing mesa structure on micro-patterned doped graphene and preparing patterned metal contact electrodes on graphene and n-aluminium gallium nitride surfaces respectively.

ZHANG S, BEN J, JIANG K, LI D, SUN X, CHEN Y

Nitride templates based on metal substrates comprises metal substrate, two-dimensional material film, which is located on metal substrate one side, inert material pattern mask layer, nitride epitaxial layer, which is located on inert material pattern mask layer side away from the metal substrate.

ZHANG S, BEN J, JIANG K, LI D, CHEN Y, SUN X

Bidirectional photoacoustic communication system has decoder for analyzing Doppler shift amount carried in optical current signal to obtain vibration spectrum and amplitude of photo-induced sound device.

CHEN Y, SUN J, PAN Q, ZHANG K, YU D, CHEN F, HE Y

Detection chip has temperature sensor that is configured on wide bandgap semiconductor, and is made of temperature sensitive material and detect temperature of wide bandgap semiconductor, and temperature sensitive material is graphene oxide.

JIANG K, SUN X, LI D, BEN J, CHEN Y, JIA Y, ZHANG S

Single-chip integrated nitride light emitting wavelength adjustable white light emitting diode, has light emitting unit provided with first graphene layer, nitride buffer layer and doped p-gallium nitride layer.

JIANG K, LI D, SUN X, BEN J, ZHANG S, CHEN Y, SHI Z

Semiconductor radiation battery has semiconductor conversion layer and graphene upper electrode that are sequentially formed above substrate and metal lower electrode which is formed below substrate and whose contact type is ohmic contact.

LI D, JIA Y, SUN X, JIANG K, CHEN Y

Graphene electrode based vertical structure deep UV LED, has metal contact electrode provided with top p-contact electrode and bottom n-contact electrode, and graphene conductive layer formed on single crystal metal copper substrate.

CHEN Y, SUN X, LI D, JIANG K, BEN J, ZHANG S