国家/地区 中国（12）
IPC部 C（11） B（3） H（2）
IPC大类 C01（7） C08（3） C23（2）
H01（2）
IPC小类 C01B（7） C08K（3） C08L（2）
C23C（2） H01L（2）
IPC C01B031/04（4） C01B032/186（4） C08K003/04（3）
C23C016/26（2）
发明人 DAI J（12）
公开年 2015（6） 2016（3） 2017（3）
申请年 2015（12）
专利权人 SHANGHAI INS.（8） UNIV WUHAN T.（2）

Preparing directly layer of controllable graphene on insulating substrate comprises forming insulating substrate on first metal layer, injecting carbon ions, forming second metal layer on surface of first metal layer and annealing.

DI Z, WANG Z, WANG G, ZHENG X, DAI J, XUE Z, ZHANG M, WANG X

Preparation of continuous single layer graphene on insulating substrate by providing insulating substrate, depositing germanium film on insulating substrate, using germanium film as catalyst and growing graphene at high temperature.

DI Z, WANG Z, DAI J, WANG G, ZHENG X, XUE Z, ZHANG M, WANG X

Preparation of patterned graphene involves providing insulating substrate, depositing germanium film on insulating substrate, etching desired pattern in germanium film, forming patterned germanium film, and continuously evaporating.

DI Z, WANG Z, DAI J, WANG G, ZHENG X, XUE Z, ZHANG M, WANG X

Dry state graphene peeling off device, has outer cylinder part connected with inner cylinder part, and discharge port connected with wind lead device, where material supply gap fixed with cutting heave that is connected with discharge port.

DAI J

Preparing graphene oxide/poly dopamine composite airgel comprises e.g. dissolving dopamine powder, adding graphene oxide, mixing, stirring, dropping tris buffer, carrying out polymerization reaction of dopamine freezing and drying.

DAI J, HUANG T, WANG Y, YANG J, ZHANG N

Preparing graphene paper prepreg comprises e.g. adding graphene and dispersing agent to a solvent, ultrasonic processing, vacuum filtering, , drying, removing the microporous membrane, impregnating, placing in the fume hood, heating.

HUANG Z, WANG F, ZHANG G, DAI J

Preparation of nanowire and graphene composite material by providing silicon germanium-on-insulator substrate comprising silicon substrate, oxide layer and silicon germanium layer from bottom to top, and etching silicon germanium layer.

DI Z, XUE Z, ZHANG M, YE L, DAI J, WANG Z

Preparing graphene on insulator by placing germanium catalyst substrate in growth chamber, introducing hydrogenous atmosphere to form germanium-hydrogen bond, heating substrate, and performing microwave treatment.

DI Z, JIA P, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J

Preparation of high toughness graphene/nitrile rubber/epoxy composite materials involves dispersing, ice bathing, performing ultrasonic magnetic stirring, oil bathing, introducing into rolling mill, collecting, degassing, and vacuum pumping.

HUANG Z, WANG F, ZHANG G, DAI J

Preparation of wrinkle-free graphene involves subjecting catalytic substrate to ion injection, forming discrete end injection units at catalytic substrate, and heating catalytic substrate in growth chamber.

DI Z, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J, WANG Z