国家/地区 中国（10）
IPC部 C（9） H（3）
IPC大类 C01（7） H01（3） C23（2）
IPC小类 C01B（7） H01L（3） C23C（2）
IPC C01B031/04（4） C01B032/186（4） C23C016/26（2）
发明人 DAI J（10）
公开年 2015（5） 2017（3）
申请年 2015（8）  2014（2） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（10）

Preparing directly layer of controllable graphene on insulating substrate comprises forming insulating substrate on first metal layer, injecting carbon ions, forming second metal layer on surface of first metal layer and annealing.

DI Z, WANG Z, WANG G, ZHENG X, DAI J, XUE Z, ZHANG M, WANG X

Preparation of continuous single layer graphene on insulating substrate by providing insulating substrate, depositing germanium film on insulating substrate, using germanium film as catalyst and growing graphene at high temperature.

DI Z, WANG Z, DAI J, WANG G, ZHENG X, XUE Z, ZHANG M, WANG X

Preparation of patterned graphene involves providing insulating substrate, depositing germanium film on insulating substrate, etching desired pattern in germanium film, forming patterned germanium film, and continuously evaporating.

DI Z, WANG Z, DAI J, WANG G, ZHENG X, XUE Z, ZHANG M, WANG X

Doped graphene preparing method, involves forming nickel thin film layer on copper substrate, and N-type graphene and P-type doped graphene formed respectively on N-type doped element-rich area and P-type doped element-rich zone.

DI Z, CHEN D, DING G, GUO Q, MA J, WANG G, XIE X, XUE Z, ZHANG M, ZHENG X, DAI J

Preparation of nanowire and graphene composite material by providing silicon germanium-on-insulator substrate comprising silicon substrate, oxide layer and silicon germanium layer from bottom to top, and etching silicon germanium layer.

DI Z, XUE Z, ZHANG M, YE L, DAI J, WANG Z

Preparing graphene on insulator by placing germanium catalyst substrate in growth chamber, introducing hydrogenous atmosphere to form germanium-hydrogen bond, heating substrate, and performing microwave treatment.

DI Z, JIA P, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J

Preparation of wrinkle-free graphene involves subjecting catalytic substrate to ion injection, forming discrete end injection units at catalytic substrate, and heating catalytic substrate in growth chamber.

DI Z, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J, WANG Z

Transfer method for graphene involves performing microwave treatment of bond sheet so that germanium-hydrogen bond is broken, and generating hydrogen such that graphene is peeled from substrate.

DI Z, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J, WANG Z

Preparation of textured graphite for, e.g. sensor, involves placing catalytic substrate in growth chamber, introducing carbon source, heating to grow graphene, and cooling in non-oxidizing protective atmosphere to form graphene surface.

DI Z, WANG G, SHI X, XUE Z, ZHANG M, ZHENG X, DAI J

Preparation of single-crystal graphene domain involves performing chemical vapor deposition on specific-plane of semiconductor material as catalytic substrate using gaseous or solid carbon.

DI Z, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J, WANG Z