国家/地区 中国（20）
IPC部 C（12） H（8）
IPC大类 C01（10） H01（8） C04（3）
C08（2）
IPC小类 C01B（10） H01L（8） C04B（3）
C08G（2） C08K（2） C08L（2）
IPC C01B031/04（10） H01L029/786（7） H01L021/336（5）
C04B041/50（3） C04B041/85（3） C08G073/10（2）
C08K009/06（2） C08L079/08（2） H01L021/04（2）
发明人 GUO H（20）
公开年 2013（17） 2014（3）
申请年 2013（20）
专利权人 UNIV XIDIAN（16） SHENZHEN INS.（3）

Preparation of graphene composite material used for electric heating film, by treating graphite rod with soluble tungstate solution, subjecting into constant voltage, and separating.

LI C, FU X, GUO H, SUN R, PENG C

Aluminum composite material used for laminate substrate, comprises preset amount of graphene oxide-coated alumina particles, allyl phenolic compound-modified bismaleimide-diisocyanate compound and curing agent.

ZENG X, GUO H, SUN R, PENG C, YAO Y

Preparing graphene comprises adding graphite with organic solvent, dispersing the graphene with UV rays, and centrifugally separating graphene, where solvent includes n-butyl alcohol, propyl alcohol and isopropyl alcohol.

ZHANG L, FU X, GUO H, SUN R

Polyimide foam composite material comprises graphite or modified graphene oxide and polyimide foam.

CHEN W, DONG Z, QIU X, GAO L, GUO H

Preparation of graphene on silicon carbide substrate used for manufacturing microelectronic devices and biological sensors, involves washing silicon carbide substrate, and placing in graphene growth device with argon gas and chlorine.

GUO H, LEI T, ZHANG Y, ZHANG C, LING X

Preparation of wide graphene silicon-based substrate grating used as copper film annealing graphene involves chemical vapor deposition, carbonization, growing silicon carbide hetero-epitaxial film, depositing copper film and annealing.

GUO H, LEI T, LIU J, ZHANG Y, HU Y

Preparation of large-area graphene used for manufacturing microelectronic devices and biological sensors, involves cleaning silicon substrate, placing in deposition reaction chamber, introducing propane and silane gas, and annealing.

GUO H, LEI T, LIU J, ZHANG F, ZHANG Y

Preparation of large-area graphene used for biological, optical and electrical sensor, involves cleaning silicon carbide, heating, carrying out hydrogen etching treatment, mixing argon and carbon tetrachloride, plating and annealing.

GUO H, LEI T, LIU J, ZHANG Y, ZHANG C

Graphene preparation method for nickel film annealing of silicon carbide substrate involves generating carbon film, introducing nickel film via growth device, electron beam evaporation and deposition and depositing nickel onto carbon film.

GUO H, LEI T, WEI C, ZHANG Y, ZHANG C

Copper film annealing of silicon carbide substrate in chlorine used in synthesizing graphene by forming carbon film on copper film by physical vapor deposition, plating copper layer, introducing argon gas and annealing.

GUO H, LEI T, ZHANG Y, ZHANG C, LING X