国家/地区 中国（15）
IPC部 H（12） C（6）
IPC大类 H01（12） C23（4） C30（3）
IPC小类 H01L（12） C23C（4） C30B（3）
IPC H01L021/205（4） C23C016/26（3） H01L021/324（3）
C30B025/18（2） C30B029/02（2） H01L021/02（2）
发明人 HAN D（15）
公开年 2013（15）
申请年 2012（15） 
专利权人 UNIV XIDIAN（15）

Method for laser-assisted lossless transfer of chemical vapor deposition graphene, involves growing gallium nitride and copper layers on sapphire substrate in sequence, depositing graphene on copper layer in chemical vapor deposition mode.

HAO Y, NING J, HAN D, YAN Y, WANG D, ZHANG J, CHAI Z

Method for removing ultrasonic-assisted graphene photoresist, involves injecting pure acetone into graphene sample, analyzing and cleaning sample, and rinsing cleaned sample in absolute ethyl alcohol followed by washing, drying and storing.

HAN D, CHAI Z, NING J, ZHANG J, HAO Y, YAN Y, WANG D

Method for stripping graphene, involves fixing graphite between upper substrate and lower substrate, treating resultant material in ultrasonic generator, and separating graphene.

NING J, ZHANG J, HAN D, CHAI Z, HAO Y, WANG D, YAN Y

Method for performing non-contact-type Hall effect measurement of graphene migration rate of semiconductor current carrier, involves triggering projection position of electromagnetic wave, and carrying out multi-point measuring.

HAO Y, HAN D, WANG D, ZHANG J, NING J, CHAI Z, YAN Y

Preparation of self-assembly growth micro-nano-scale graphene used as electrode by carrying out electron beam evaporation of transition metal film on substrate, forming transition metal particles and carrying out chemical vapor deposition.

WANG D, ZHANG J, CHAI Z, HAO Y, HAN D, YAN Y, NING J

Preparation of side gating graphene field-effect transistor structure involves placing copper foil in reaction chamber, vacuumizing reaction chamber, performing thermal annealing on copper foil, and growing graphene.

WANG D, HAN D, ZHANG J, HAO Y, CHAI Z, NING J, YAN Y

Method for laminated transferring for graphene transparent conducting thin film that is utilized for reducing polymethyl methacrylate residue photoresist, involves preparing single-layer graphene by chemical vapor deposition epitaxy.

ZHANG C, ZHANG J, HAO Y, CHAI Z, WANG D, YAN Y, NING J, HAN D

Process for annealing zinc oxide substrate transfer graphene, involves adopting high-temperature annealing mode, repairing graphene defect generated during substrate transfer process, and removing impurities during transfer process.

WANG D, ZHANG J, HAO Y, HAN D, NING J, YAN Y, CHAI Z

Annealing sapphire substrate used for transfer of graphene, by introducing hydrogen, argon and methane gases into copper foil, soaking in ferric pernitrate and acetone, and rinsing with ethanol and deionized water, passing into argon gas.

WANG D, CHAI Z, NING J, ZHANG J, HAN D, HAO Y, YAN Y

Direct epitaxial growth method of graphene used for fabrication of device, involves using sapphire as substrate, preprocessing sapphire substrate, regulating growth pressure, flow rate and temperature and growing graphene on sapphire.

ZHANG J, HAN D, NING J, CHAI Z, YAN Y, WANG D, HAO Y