国家/地区 美国（11）
IPC部 H（9） B（5） C（4）
G（2）
IPC大类 H01（9） C01（4） B32（3）
C25（2） G01（2）
IPC小类 H01L（8） C01B（4） B32B（3）
C25F（2）
IPC C01B031/04（4） H01L029/16（3） H01L029/49（3）
H01L029/66（3） B32B038/10（2） C25F003/02（2）
C25F005/00（2） C25F007/00（2） H01L021/336（2）
H01L021/84（2） H01L029/775（2） H01L029/78（2）
H01L029/786（2）
发明人 HAN S（13）
公开年 2014（6） 2013（5） 2012（2）
申请年 2012（13）
专利权人 INT BUSINESS.（10） HCGT LTD（2）

Structure and method for a graphene-based apparatus comprises acts of forming a graphene layer on a metal layer; forming a protective layer on the graphene layer.

HAN S, CAO Q

Method for manufacturing graphene device used for manufacturing e.g. solar cell, involves removing metal layer and forming conductive layer on graphene layer relative to surface of protective layer.

CAO Q, HAN S

Method for manufacturing graphene-based apparatus utilized to make e.g. solar cell, involves forming graphene layer on metal layer, remvoing metal layer from graphene layer, and forming conducting layer formed on graphene layer.

CAO Q, HAN S

Graphene-based electromechanical switch, has flexible conductive element separated from material by gap, where gap is sized to create negative threshold voltage at gate material for opening circuit.

GUO D, HAN S, LIU F, WONG K K H, YUAN J

Electrochemical etching method for removing metal substrate layer from graphene layer, involves connecting graphene layer or metal substrate layer to power source to supply current to etch metal substrate layer from graphene layer.

HAN S, GUO L, LI X

Apparatus for electrochemical or electroplating etching of copper foils from graphene for e.g. electronic device application, has anode including metal substrate layer etched from graphene layer in response to current flowing through anode.

HAN S, GUO L, LI X

Fabrication method of graphene-based electronic nanoconstriction device, involves forming top-gate dielectric layer over graphene layer, and forming top-gate electrode over graphene channel.

CHEN C, HAN S

Non-transitory tangible computer readable medium for fabricating integrated circuit structure i.e. gate tunable graphene-based electronic nanoconstriction device, has set of instructions for locating graphene layer between contacts.

CHEN C, HAN S

Semiconductor device i.e. graphene FET, has graphene layer formed on doped semiconductor substrate and contacts and for serving channel layer for FET, where doped semiconductor substrate serves as back gate for FET.

BOL A A, FRANKLIN A D, HAN S

Circuit e.g. oscillator circuit, has gate voltage source which is provided to modulate gate voltage on gate, such that electric current through graphene channel exhibits negative differential resistance.

HAN S, LIN Y, WU Y