国家/地区 韩国（9） 美国（9） 中国（4） 日本（3）
IPC部 H（9） B（6）
IPC大类 H01（9） B82（5） B32（2）
IPC小类 H01L（9） B82Y（5） B32B（2）
IPC H01L029/78（7） H01L021/336（6） B82Y099/00（4）
B82Y040/00（3） H01L029/10（3） H01L029/786（3）
H01L051/05（3） B82Y030/00（2） H01L021/20（2）
H01L029/06（2） H01L029/16（2） H01L029/772（2）
H01L051/30（2） H01L051/40（2）
发明人 HEO J（9）
公开年 2012（6） 2011（2）
申请年 2011（9）
专利权人 SAMSUNG ELEC.（9） SNU R DB FOU.（3） UNIV SEOUL N.（2）

Method for transferring graphene, involves forming trench on substrate, arranging graphene layer using additive liquid on substrate, pressurizing graphene layer on substrate, and removing additive liquid from substrate by drying.

SEOK S H, SEONG H J, JONG J H, JUN Y H, JUN P S, JAE S H, SEO D, HEO J, CHUNG H, YANG H, PARK S, SONG H, HEO J S, CHUNG H J, YANG H J, PARK S J, SONG H J

Graphene electronic device e.g. back gate FET, has graphene channel layer extending between metals, and source electrode and drain electrode provided on edges of channel layer and formed to have thickness of specific range.

HEO J, CHUNG H, SEO S, LEE S, YANG H, HEO J S, CHUNG H J, SEO S A, LEE S H, YANG H J, JEONG H J, HUH J, JUNG H

Graphene electronic device e.g. FET has source electrode and drain electrode that are connected to both edges of multiple graphene channel layers.

CHUNG H, LEE J, SHIN H, SEO S, LEE S, HEO J, YANG H, CHUNG H J, LEE J H, SHIN H C, SEO S A, LEE S H, HEO J S, YANG H J, SHIN J, HUH J, JUNG H

Graphene substrate comprises a substrate, metal oxide film on the substrate, and graphene layer on metal oxide film in which the concentration of oxygen in metal oxide film is gradually reduced from the substrate towards the graphene layer.

CHUNG H, SEO S, LEE S, HEO J, YANG H, CHUNG H J, SEO S A, LEE S H, HEO J S, YANG H J

Graphene electronic device e.g. field effect transistors, has graphene channel layer which is formed on gate insulating layer and source and drain electrodes are located on graphene channel layer.

HEO J, SEO S, LEE S, CHUNG H, YANG H, SEO S A, JUNG H, HUH J, HEO J S, LEE S H, CHUNG H J, YANG H J

Semiconductor device comprises gate electrode on substrate, gate insulating layer, interlayer dielectric layer, graphene layer, and source and drain on graphene layer.

CHUNG H, LEE J, SHIN H, SEO S, LEE S, HEO J, YANG H, CHUNG H J, LEE J H, SHIN H C, SEO S A, LEE S H, HEO J S, YANG H J

Graphene electronic device e.g. FET comprises a substrate configured to act as a gate electrode, a layer of gate oxide disposed on the substrate, a layer of hydrophobic polymer, a graphene channel layer, and a source and drain electrodes.

YANG H, SEO S, LEE S, CHUNG H, HEO J, YANG H J, SEO S A, LEE S H, CHUNG H J, HEO J S

New graphene comprising a structure of carbon atoms partially substituted with boron atoms and nitrogen atoms, where the graphene has a band gap, useful in a channel of a transistor.

LEE S, SEO S, WOO Y, CHUNG H, HEO J, LEE S H, SEO S A, WOO Y S, CHUNG H J, HEO J S, HUN L S

Graphene electronic device i.e. FET, for use in gas sensor, has interlayer dielectric formed on silicon substrate, insulating layer formed on interlayer dielectric, and graphene layer formed on insulating layer.

CHUNG H, BAEK S, SEO S, WOO Y, HEO J, SEO D, CHUNG H J, BAEK S J, SEO S A, WOO Y S, HEO J S