国家/地区 中国（12）
IPC部 H（12） C（4） B（2）
G（2）
IPC大类 H01（12） C01（4） C23（3）
G06（2） H10（2）
IPC小类 H01L（12） C01B（4） C23C（3）
G06N（2） H01B（2） H10B（2）
IPC H01L029/06（6） H01L029/16（4） H01L029/423（4）
H01L029/786（4） C23C016/26（3） H01L021/02（3）
H01L029/08（3） C01B032/182（2） C01B032/186（2）
C23C016/50（2） H01B001/04（2） H01L021/336（2）
H01L027/11582（2） H01L027/32（2） H01L029/417（2）
发明人 KIM C（12）
公开年 2023（5） 2020（2） 2021（2）
申请年 2022（5） 
专利权人 SAMSUNG ELEC.（8）

Nonvolatile memory device for neuromorphic apparatus, has gate insulating layer extending in first direction between channel layer and gate electrodes, where each of gate electrodes includes metal-doped graphene.

SHIN K, KIM C, PARK S, KIM H, BYUN K, YUN D, LEE C, LI C, YIN T, PIAO S, JIN C, SHIN K W, PARK S H, KIMHYUNWOO, BYUN K E, JIN Y D, LEE C S

Electronic device for use in electronic apparatus, has two-dimensional material layer formed between channel layer and gate electrode, where material layer blocks electron transfer between gate electrode and channel layer.

SHIN K, BYUN K, LEE S, KIM C, LEE C, LI C, JIN C, SHIN K W, BYUN K E, LEESANGSOO, LEE C S

Vertical channel array transistor for use in semiconductor device, has graphene insertion layer that is formed between source/drain electrode and channel pattern.

BYUN K, KIM S, KIM C, SHIN K, LEE C, LI C, JIN C, JIN S, BYUN K E, SHIN K W, LEE C S

Multi bridge channel field effect transistor for use in e.g. memories, has gate insulating layer that surrounds first channel layer, and gate electrode that surrounds first channel layer with gate insulating layer.

KIM C, KIM U, JUNG A, BYUN K, JIN Y, JIN C, JUNG A R, BYUN K E

Semiconductor device for use in electronic apparatus, has source/drain structure including silicide film to be formed between first semiconductor region and first electrode, and conductive barrier to be formed.

KIM C, NAM S, SHIN K, LEE D, LI D, JIN C, NAM S G, SHIN K W, LEE D H

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Display device in multimedia devices such as TV set, comprises upper layer structure that comprises dielectric constant control layer which controls sensing sensitivity of input sensor.

CHOI Y S, LEE J H, KIM C, JUNG J, JUNG J W, CUI Y, LEE J, JIN Z, ZHENG Z

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Interconnect structure for use in electronic device, has cap layer provided on surface of conductive wiring and which includes nanocrystalline graphene comprising nano-sized crystals.

BYUN K, SHIN K, KIM Y, SHIN H, SONG H, LEE C, KIM C, CHO Y, BIAN Q, SHEN J, JIN Y, SHEN X, SONG X, LI C, JIN C, ZHAO L, BYUN K E, SHIN K W, HUN K Y, SHIN H J, SONG H J, LEE C S, CHO Y C

Organic LED display panel, has organic layer formed between electrode and graphene-stacked multilayer thin film, multilayer thin film provided with graphene layers, and interlayer bonding provided between graphene layers.

LEE D, KIM C, CHO S, JEONG Y, JUNG Y, LEE D C, KIM C H, CHO S H, JEONG Y B