国家/地区 美国（27） 韩国（23） 中国（11） 欧洲专利局（EPO）（7） 日本（3）
IPC部 H（26） C（8） G（6）
B（5）
IPC大类 H01（25） C01（4） C23（4）
B01（3） G11（3） H10（3）
B82（2） G01（2） G06（2）
IPC小类 H01L（24） C01B（4） C23C（4）
G11C（3） H10B（3） B01D（2）
G06N（2） H01B（2） H01S（2）
IPC H01L029/16（11） H01L029/66（9） H01L021/02（8）
H01L027/108（4） H01L029/06（4） H01L029/786（4）
H01L045/00（4） C01B031/04（3） C23C016/02（3）
C23C016/455（3） H01L021/20（3） H01L023/00（3）
H01L027/24（3） B01D053/22（2） B01D067/00（2）
发明人 KIM H（29）
公开年 2023（6） 2022（5） 2021（4） 2015（3） 2016（3） 2017（3） 2013（2） 2014（2）
申请年 2022（7）  2020（6）  2013（4）  2016（4）  2015（3）  2021（2） 
专利权人 SAMSUNG ELECTRONICS CO LTD（29）

Complex of heterogeneous two-dimensional materials used in electronic device, comprises substrate, first two-dimensional material layer having two-dimensional crystal structure on substrate, and second two-dimension material layer.

SEOL M, SHIN H, BYUN K, HWANG H, LEE C, KIM H, SUK S H, BYUN K E, HWANGHYUNTAE, LEE C S, KIM H J, JIN J, LI C

Electronic device e.g. semiconductor memory device, for use in memory system, has gate oxide layer formed between resistance switching layer and gate, source and drain that are arranged on switching layer and spaced apart from each other, and color filter arranged on switching layer.

SHIN H, KIM H, HINTON H J, LIU C, HAM D, JANG H, LEE M

Nonvolatile memory device for neuromorphic apparatus, has gate insulating layer extending in first direction between channel layer and gate electrodes, where each of gate electrodes includes metal-doped graphene.

SHIN K, KIM C, PARK S, KIM H, BYUN K, YUN D, LEE C, LI C, YIN T, PIAO S, JIN C, SHIN K W, PARK S H, KIMHYUNWOO, BYUN K E, JIN Y D, LEE C S

Positive electrode for lithium battery, has composite material comprising positive active material as core of composite material, and coating layer located on surface of positive active material forming shell on core of composite material.

CHANG W, KIM H, KIM S, GWON H, CHOI H

Semiconductor memory device comprises substrate including active region defined by device separation film, where active region including first portion and second portions, second portions being on two opposite sides of first portion, bit line on substrate and extending across active region.

KIM H, KIM S H, LEE J E, JIN X, KIM S, LI J, KIM H S

Interconnect structure for use in electronic device, has graphene-metal barrier including graphene layers and metal particles on grain boundary of each graphene layer and between graphene layers, and conductive layer formed on barrier.

LEE S, SHIN H, KIM H, KIM K, SHIN K

Photodetector for use in image sensor, comprises first electrode, collector layer on first electrode, tunnel barrier layer on collector layer, graphene layer on tunnel barrier layer, emitter layer on graphene layer, and second electrode on emitter layer comprising second semiconductor material.

SHIN H, KIM H, LEE J, JO S

Fabricating hybrid element involves forming multiple first elements on first substrate, separating multiple second elements grown second substrate from second substrate, and transferring multiple second, separated from second substrate, onto first substrate, where transfer, multiple second elements.

HONG S, PARK J, KIM H, KIM D, HWANG J, HWANG K, HWANG K W, HWANG J S, KIM H J, HONG S W

Semiconductor device has semiconductor structures with patterns, second conductive pattern that extends in second direction on gate insulation pattern, and second impurity region that is mounted on each of second semiconductor patterns.

HONG J, LEE K, PARK S, KIM I, KIM Y, KIM H, LI J, KIM I K, JIN R, KIM H C, PARK S H, LEE K H

Vertical variable resistance memory device has pillar structure that is extended in first direction on substrate and penetrating gate electrodes and first insulating patterns, and variable resistance pattern that is formed on sidewall of vertical electrode.

KIM H C, KIM Y, SEO H W, RYU S, LEE K H, HONG J, LI J, YU S, XU H, JIN R, KIM H