国家/地区 韩国（10） 美国（9） 日本（4） 世界知识产权组织（3） 中国（2） 欧洲专利局（EPO）（2）
IPC部 B（9） H（7） C（6）
G（3）
IPC大类 B82（7） H01（7） C01（5）
C23（2） G02（2）
IPC小类 B82Y（6） C01B（5） H01L（5）
C23C（2） G02F（2） H01B（2）
IPC B82Y040/00（5） C01B031/02（5） H01L029/06（4）
B82Y030/00（3） H01L033/00（3） B82Y020/00（2）
H01L021/02（2） H01L021/36（2） H01L029/786（2）
H01L033/02（2） H01L033/12（2）
发明人 KIM S（12）
公开年 2012（9） 2013（3）
申请年 2011（12）
专利权人 KIM S（4） SAMSUNG ELEC.（4） AN S（2） KUMOH NAT IN.（2）
LEE D（2） LG SILTRON I.（2） SK SILTRON C.（2） UNIV KYUNGHE.（2）

Graphene electrical wire, has metal core having shape of fiber, and graphene layer synthesized on outer surface of metal core by chemical vapor deposition and produced by exfoliation.

KIM K, KIM Y K, KIM S

Method for controlling radiation and absorption characteristics by changing size and shape of graphene quantum dot involves detecting size and shape of graphene quantum dot, producing light emitting energy, and obtaining shape ratio.

CHOI S H, KIM S

Manufacturing graphene oxide-calcium carbonate hybrid film used for manufacturing graphene oxide-hydroxyapatite crystal and culturing osteoblast, by subjecting spherical graphene oxide-calcium carbonate vaterite to reduction process.

PARK C B, KIM S, KU S H, LIM S Y, KIM J H

Method for manufacturing graphene used in solar cell, involves heat-treating deposited mixed thin film on semiconductor substrate at specific temperature for preset time.

CHOI S H, YANG S B, KIM S

Semiconductor device e.g. transistor silicon-based MOSFET, for use as e.g. touch sensor in organic LCD device, has unit layers spaced apart from each other along vertical direction and including patterned graphene layers.

KIM S, CHOI W, JIN Y, KIM S K, JIN Y W

Active optical device i.e. polymer-dispersed liquid crystal, for use in two-dimensional and three-dimensional images display apparatus, has liquid crystal layer arranged between graphene layer and transparent electrode layer.

KIM U, KIM S, LEE S, KIM U J, KIM S I, LEE S J

Thin-film transistor substrate for liquid crystal displays comprises insulating substrate; passivation film with contact hole exposing portion of drain electrode; and pixel electrode formed of carbon composition of carbon nanotubes/graphene.

NING H L, JEONG C, PARK J, KIM S, CHO S, KIM Y, BYUN J, JEONG C O, PARK J Y, KIM S G, CHO S H, KIM Y H, BYUN J S

Compound semiconductor manufacturing method, involves forming graphene-derived material layer on selected substrate, and connecting compound semiconductor layer to graphene-derived material layer.

AN S J, LEE D G, KIM S H, AN S, LEE D, KIM S

Compound semiconductor device for light emitting device i.e. LED, has oxidation graphene layer provided with oxidation graphene sheets on part of surface of substrate, and buffer layer arranged between substrate and semiconductor layer.

AN S J, LEE D G, KIM S H, LEE D K, AN S, LEE D, KIM S

Graphene light-emitting device e.g. LED comprises a p-type graphene doped with a p-type dopant, an n-type graphene doped with an n-type dopant, and an active graphene that is disposed between the p-type graphene and the n-type graphene.

HWANG S, KO G, SIM S, CHUNG H, SEONG H, SONE C, LEE J, KO H, CHOI S, KIM S, SUN W W, GUAN Y K, SUN H S, CHUNG H J, HAN K S, CHEOLSOO S, LEE Z H, HUYNH D K, HWANG S W, KO G W, SIM S H, SEONG H K, SONE C S, LEE J H, KO H D, CHOI S H, SHIM S, KO K, JEONG H, GO J, SON C