国家/地区 韩国（15） 美国（9） 世界知识产权组织（6） 欧洲专利局（EPO）（3）
IPC部 H（12） C（5） B（4）
G（2）
IPC大类 H01（12） B82（3） C01（3）
B01（2） B32（2） B41（2）
IPC小类 H01L（11） C01B（3） H01B（3）
B01J（2） B32B（2） B41M（2）
B82B（2）
IPC H01L029/16（4） C01B031/02（3） H01L031/028（3）
B32B009/00（2） B82B001/00（2） H01L021/02（2）
H01L021/04（2） H01L021/324（2） H01L031/0224（2）
H01L031/042（2） H01L031/18（2）
发明人 KIM S（15）
公开年 2014（15）
申请年 2013（9）  2014（4）  2012（2） 
专利权人 SAMSUNG ELEC.（6） UNIV KYUNGHE.（6） UNIV SUNGKYU.（5）

Thermoelectric structure for forming thermoelectric device for thermoelectric apparatus, comprises graphene layer, and thermoelectric component comprising thermoelectric film and quantum dot on thermoelectric film, on graphene layer.

LEE K, KIM S, HWANG S, LEE S, LEE Y, HWANG S W, KIM S I, KIM S W, LEE K H, LEE S M, LEE Y H

Graphene quantum dot optical detector, has graphene quantum dot layer formed with multiple graphene quantum dots and arranged with graphene layer, where graphene quantum dot layer removes moisture and solution in graphene layer.

CHOI S H, KIM S, KIM C O, SHIN D H

Controlling method of graphene thickness used for e.g. manufacturing semiconductor device, involves ion-implanting carbon atoms in metal, heating carbon atoms-implanted metal, cooling, and growing graphene on metal.

CHOI S H, KIM S, LEE J S

Insulating sheet for electrical device, has hexagonal boron nitride sheet which is arranged on graphene sheet.

KIM S, LEE K, KIM S W, LEE K H

Method for eliminating the adsorbates on the surface of graphene, involves removing the residue of the graphene from the surface using rapid thermal processing process in five to thirty minutes, while removing the imprint of graphene.

CHOI S H, KIM S, JANG C W, SHIN D H

Manufacture of graphene laminated structure used for electronic device, involves plasma-treating surface of hexagonal boron nitride sheet, depositing hexagonal boron nitride sheet on graphene sheet, and forming insulating layer.

KIM S, HAN S, HAN S A, KIM S W

Photomask has anti-contamination layer that is provided with graphene layer, is configured to contact with top surfaces of patterns, and is spaced apart from substrate between the patterns.

KIM M J, LEE D, KIM S

Manufacture of graphene counter electrode used for dye-sensitized solar cell, involves manufacturing graphene compound with nitrogen element, and surface-treating fluorine doped tin oxide transparent electrode with graphene compound.

KIM H, JU M, CHOI I, KIM S, KIM J, LEE J, BAEK J, JEON I, CHOI H, KIM H K, JU M J, CHOI I T, KIM S G, KIM J C, LEE J J, BAEK J B, JEON I Y, CHOI H J

Photo-detection device used for optoelectronic device, has n-type graphene and p-type graphene that are welded to p-n perpendicularity homogeneous vertical junction, and electrodes that are formed on light detection layer.

CHOI S H, KIM S, KIM C O, CHIO S, JIN C, KIM C

Graphene-nanoparticle structure used in photoelectric device e.g. fuel cells and supercapacitors comprises substrate; first graphene layer disposed on the substrate; and first nanoparticle layer disposed on the first graphene layer.

KIM S, KANG D, CHA S, SHAKIR M I, PARK Y, CHA S N, KANG D J, KIM S M, PARK Y J