国家/地区 韩国（10） 美国（7） 中国（2）
IPC部 C（7） H（7） B（6）
G（2）
IPC大类 C01（7） H01（7） B01（4）
G01（2）
IPC小类 C01B（7） H01L（6） B01J（4）
IPC C01B031/04（6） H01L021/02（3） H01L029/16（3）
B01J019/08（2） H01L029/786（2）
发明人 KIM S（12）
公开年 2017（12）
申请年 2017（5）  2016（4）  2015（3） 
专利权人 SAMSUNG ELEC.（2）

Triboelectric type graphene-based touch sensor device for electronic equipment, has triboelectric for generating triboelectric potential by contact of friction material whose contact is detected based on current change in channel layer.

KIM S W, KIM T H, KHAN U, RYU H J, CHOI S, KANG M, KIM D H, SEUNG W C, KIM S, HO K T, HAN J R, SEUNG C, KIM D, WAN C S

Preparing metal-carbon composite involves mixing carbon nanotube, graphene oxide, metal salt and metal nanowire to obtain aqueous mixture, freezing to obtain cryo-composite, drying to obtain dry composite and reducing.

WORSLEY M A, SATCHER J H, KUCHEYEV S, CHARNVANICHBORIKARN S, COLVIN J D, FELTER T E, KIM S, MERRILL M, ORME C A

Gas barrier film used in packaging of food, has barrier layer which is formed with mixture of nanoclay and graphene in upper portion of polymer layer.

CHURL S L, KIM S, KYU S L

Semiconductor device e.g. dynamic RAM device for use in electronic system, has doped pattern provided between buffer and channel patterns, and buffer pattern provided, where doped pattern comprises graphene injected with impurity.

CANTORO M, WU Z, BHUWALKA K, KIM S, MAEDA S

Electrostatic compliant sensor for insulator, comprises first electrode which is deposited in upper and lower part of sensor wire and insulator included second electrode, included support fiber and graphene oxide coated on support fiber.

KIM B, HWANG W, KIM S, LEE D, HAN K, HWANG B

Preparing silicon-carbon-graphene composite involves drying waste silicon sludge, acid leaching, and selectively separating and recovering silicon through ultrasound treatment, and centrifuging solution containing dried sludge.

DONG J H, KWON C H, SUP K D, HYUK C J, KYUNG K S, JANG H, CHANG H, KIL D, CHOI J, KIM S, ZHANG X, JI D, CHOI J H, JIN X

Preparing graphene-based thin-film laminate used in e.g. transistor, comprises conducting cycle having e.g. contacting surface of graphene onto substrate with non-metal precursor gas and activating surface of graphene with plasma N times.

PARK C, CHO S, SEO S, SHIN S, KIM T, KIM S, PIAO Z, SEO S A, SHEN Z, PARK C H, CHO S M, SHIN S M, KIM T K, KIM S Y

Solar cell, has doped graphene layer formed on silicon quantum dot layer, and encapsulation layer formed on doped graphene layer and encapsulating doped graphene layer, where electrodes formed on upper and lower parts of hybrid structure.

CHOI S H, KIM S, KIM J M, SUK H C, SUNG K, JONG M K, HO C S, MIN K J

Manufacturing graphene used in field effect transistor, supercapacitor, hydrogen generation or storage, solar cell, photocatalyst and biosensor, comprises forming the graphene by unzipping doped carbon materials by an external stimulus.

KIM S O, LEE H J, LIM J, KIM S

Cell-graphene hybrid device useful for diagnosing and treating muscle diseases in vivo and vitro, comprises a polymer support layer, a graphene layer disposed on the polymer support layer, and a cell layer disposed on the graphene layer.

KIM D, HYEON T, CHOI S, KIM S, CHO K