国家/地区 美国（9） 日本（7）
IPC部 H（9） B（3） C（3）
IPC大类 H01（9） B82（3） C01（2）
H05（2）
IPC小类 H01L（9） B82Y（3） C01B（2）
H05K（2）
IPC H01L023/532（8） H01L021/3205（7） H01L021/768（7）
H01L021/285（4） H01L023/48（4） H01L029/16（3）
B82Y010/00（2） B82Y030/00（2） B82Y099/00（2）
C01B031/02（2） H01L021/02（2） H01L021/28（2）
H01L023/52（2） H01L023/528（2） H05K001/09（2）
发明人 KITAMURA M（9）
公开年 2016（4） 2013（2） 2015（2）
申请年 2015（5）  2012（2） 
专利权人 TOSHIBA KK（9） KITAMURA M（4） KAJITA A（3） SAKAI T（3）
SAKATA A（3） WADA M（3） YAMAZAKI Y（3） KATAGIRI M（2）

Semiconductor device such as metal oxide semiconductor (MOS) transistor and capacitor, has graphene layer with first graphene layer and is provided on second catalyst region.

SAITO T, KITAMURA M, SAKATA A, WADA M, KAJITA A, SAKAI T

Sensor e.g. biosensor for detecting detection target substance, has first electrode which is electrically connected to first edge of first graphene film that is parallel with first direction.

SAITO T, KITAMURA M, SAKATA A, KAJITA A, ISOBAYASHI A, SAKAI T

Method for manufacturing semiconductor device, involves forming first film, pattern of second film on upper surface of first film and graphene film on upper surface of first film and from side surface of pattern of second film.

ISOBAYASHI A, KITAMURA M, YAMAZAKI Y, KAJITA A, SAITO T, ISHIKURA T, SAKATA A, SAKAI T, WADA M

Semiconductor device, has foundation layer including first and second layers, catalyst layer formed on surface of foundation layer, where catalyst layer includes protruding area, and graphene layer is in contact with protruding area.

ISHIKURA T, KAJITA A, SAKAI T, ISOBAYASHI A, WADA M, SAITO T, KITAMURA M, SAKATA A

Semiconductor device has insulation film that is formed on graphene interconnect, and via conducting portion that is formed in via hole that is provided in interconnect and insulation film.

KITAMURA M, SAKATA A, MIYAZAKI H, KAJITA A, SAKAI T

Semiconductor device for large scale integrated circuit (LSI), has graphene wires that are provided within each catalyst film formed in trenches of wire layer.

YAMAZAKI Y, WADA M, KITAMURA M, SAKAI T

Semiconductor device has metal interconnect and graphene interconnect that are stacked to one another.

SAKATA A, KITAMURA M, WADA M, KATAGIRI M, YAMAZAKI Y, KAJITA A

Manufacturing method of semiconductor device, involves forming graphene layer on catalyst layer after planarizing exposed surface of catalyst layer by oxidation-treating.

YAMAZAKI Y, KATAGIRI M, SAKAI T, SAKUMA H, KITAMURA M, SAKATA A, WADA M, KAJITA A, MIZUSHIMA I, SAKUMA N

Wire used in semiconductor device, has graphene wires formed on metal part and electrically connected to metal film on substrate, in which metal film and metal part are formed using different metals or alloys.

YAMAZAKI Y, WADA M, KITAMURA M, SAKAI T