国家/地区 韩国（10） 美国（7） 中国（5） 欧洲专利局（EPO）（4）
IPC部 H（7） B（5） C（5）
IPC大类 H01（7） C01（5） B82（4）
IPC小类 H01L（7） C01B（5） B82Y（4）
IPC H01L021/336（5） H01L029/78（5） B82Y040/00（4）
C01B031/02（4） H01L029/16（4） H01L029/66（4）
H01L029/786（4） H01L021/02（3） H01L029/06（3）
B82Y099/00（2） H01L021/04（2） H01L021/683（2）
H01L029/417（2） H01L029/778（2）
发明人 LEE C（10）
公开年 2014（5） 2013（3） 2015（2）
申请年 2013（10）
专利权人 SAMSUNG ELEC.（7）

Graphene composite comprises anion amphiphilic surfactant, graphene formed by reducing or peeling of carbon compound, and cationic polymer obtained by polymerizing cationic monomer containing nitrogen atom(s).

LEE S Y, LEE C, CHOE H, GONG S Y, LI X, LI Z, CUI X, KONG X

Manufacturing graphene, comprises heating a substrate, irradiating a target containing carbon source with pulse laser, and depositing by passing carbon fine particles generated from laser irradiated target through the substrate.

LEE C, BYEONG J N

Graphene oxide used as substituent for enzyme, in biological material industry and detergent industry, hydrolyzes ester linkage of organic compound.

JANG S, JEONG H K, LEE C, LEE H, HEON J S, HAN J, KYUNG J H

Manufacturing method of graphene device e.g. FET , nanogap device, graphene sensor involves etching protection layer until residual layer made of material for forming protection layer remains on active area of graphene layer.

LEE J, JEON T, KIM Y, LEE C, JUNG Y, LEE J H, JEON T H, KIM Y S, LEE C S, JUNG Y S

Method for preventing charge accumulation by utilizing graphene layer in semiconductor device manufacturing process, involves forming graphene layer before patterning material layer on surface of substrate under material layer.

ROH Y, KIM U, LEE C, ROH Y G, KIM U J, LEE C W

Apparatus for manufacturing device used for preparing graphene for electronic circuit, comprises graphene structure including metal catalyst layer formed on substrate, protection layer, and graphene layer, and power unit.

LEE J, JUNG Y, KIM Y, LEE C, MOON C, LEE J H, JUNG Y S, KIM Y S, LEE C S, MOON C Y, MUN Z R

Transistor useful for electronic devices such as a radio frequency device for high frequency and display, comprises a channel layer including graphene, a gate insulating layer, a gate facing the channel layer, and a source and a drain.

LEE C, KIM Y, LEE J, JUNG Y, LEE C S, KIM Y S, LEE J H, JUNG Y S

Graphene switching device comprises first electrode and insulating layer in semiconductor substrate forming energy barrier between graphene layer and electrode, metal particles, second electrode, gate insulating layer and gate electrode.

SEO D, KIM S, PARK S, YUN Y, LEE Y Y, LEE C, DAVID S, KIM S W, PARK S J, YUN Y J, LEE Y H

Method for manufacturing graphene device, involves forming device portion on first substrate, which is provided with graphene layer and attaching second substrate onto device portion and removing first substrate.

LEE C, LEE J, KIM Y, MOON C, LEE C S, LEE J H, KIM Y S, MOON C Y, MUN Z R

Transistor e.g. three-dimensional graphene channel transistor used in semiconductor device, has channel layer that is provided to cover both side surfaces and top surface of gate, and channel layer is provided with graphene.

LEE C, LEE J, KIM J, KIM Y, MOON C, LEE C S, LEE J H, KIM Y S, KIM J S, MOON C Y, MUN Z R