国家/地区 韩国（9） 美国（5） 中国（2） 欧洲专利局（EPO）（2） 日本（2）
IPC部 H（7） C（4） G（2）
IPC大类 H01（7） C01（3） C23（2）
G03（2）
IPC小类 H01L（4） C01B（3） C23C（2）
G03F（2）
IPC C01B032/186（3） C23C016/26（2） G03F001/62（2）
H01L021/02（2） H01L029/16（2）
发明人 LEE C（10）
公开年 2020（6） 2021（4）
申请年 2019（10）
专利权人 SAMSUNG ELEC.（5） S S TECH CO.（2）

Conductive carbon paste composition useful for electrode comprises binder resin, solvent, conductive carbon material and nano silica precursor.

LEE C, JANG J T, OH H B, LEE T H, PARK Y J, LEE C K

Pellicle attached to a photomask used in an EUV lithography process for use in preventing cracking and destruction of a thin film, comprises a core layer, and a support layer pattern that supports the pellicle portion from a lower portion.

NAM K S, LEE C, HONG J H, KIM J

Carbon-sulfurized polymer composite used in positive electrode for manufacturing lithium secondary battery including lithium-sulfur secondary battery, lithium secondary battery, comprises porous carbon material.

KIM B S, LEE C, TAE K

Source device for emitting x-rays to bones of human body for medical inspection, comprises emitter formed on upper surface of cathode electrode to emit electrons and anode electrode is formed to be spaced apart from cathode electrode.

LEE C J, LEE S H, HAN J S, GO H B, GO H, HAN J, LI X, LEE C

Pellicle used for extreme UV-lithography, comprises two-layer film containing graphene, silicon, silicon and silicon nitride, silicon and silicon carbide, silicon and molybdenum silicon, and has preset transmittance, and thickness.

NAM K S, LEE C, HONG J H, YUN J W

Graphene structure for e.g. static RAM, has silicon substrate whose surface is arranged with graphene, where material of substrate and carbon of graphene are covalently bonded and arranged between substrate surface and graphene.

LEE E, BYUN K, SONG H, SHIN H, KIM C, SHIN K, LEE C, JUNG A, BYUN K E, SONG H J, SHIN H J, SHIN K W, LEE C S, JUNG A R

Graphene formation involves forming carbon monolayer on substrate by injecting reaction gas into reaction chamber, where former reaction gas comprises source being carbon source and including component.

SHIN H, SHIN K, KIM C, NAM S, BYUN K, SONG H, LEE E, LEE C, JUNG A, CHO Y, SHIN H J, SHIN K W, NAM S G, BYUN K E, SONG H J, LEE C S, JUNG A R, CHO Y C

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Interconnect structure for electronic device, has metal bonding layer for providing interfacial bonding between metal interconnect and graphene layer, where metal bonding layer includes metal material.

NAM S, SHIN H, SHIN K, KIM C, BYUN K, SONG H, LEE E, LEE C, JUNG A, CHO Y, NAM S G, SHIN H J, SHIN K W, BYUN K E, SONG H J, LEE C S, JUNG A R, CHO Y C

Directly growing of carbon material in production of high-quality graphene, involves adsorbing carbons onto substrate by supplying carbons to substrate, and removing unreacted carbon residues from substrate after supplying carbons.

KIM C, SHIN H, BYUN K, SHIN K, LEE C, NAM S, AN S, LEE J, CHO Y, SHIN H J, BYUN K E, SHIN K W, LEE C S, NAM S G, AHN S J, LEE J H, LEE J I, CHO Y C