国家/地区 韩国（10） 美国（7） 中国（3） 欧洲专利局（EPO）（3） 世界知识产权组织（2）
IPC部 H（7） B（5） C（5）
IPC大类 H01（7） C01（5） B82（4）
C07（2）
IPC小类 H01L（7） C01B（5） B82Y（3）
IPC C01B031/02（5） H01L021/02（4） H01L021/336（4）
H01L029/16（4） H01L029/66（4） H01L029/78（4）
B82Y040/00（2） H01L021/20（2） H01L021/28（2）
发明人 LEE C（10）
公开年 2014（10）
申请年 2013（5）  2014（5） 
专利权人 SAMSUNG ELEC.（7） DONG JIN SEM.（2）

New aromatic compound used as dispersion stabilizer for graphene-alkali metal salt composite used in manufacture of graphene used for electrical device, battery, fuel cell, and refractory metal.

KANG B, LEE D H, LEE C, ANN J, CHOI J

New halogen-substituted compound for manufacturing functionalized graphene oxide.

KANG B, LEE D H, LEE C, ANN J, CHOI J

Method for transferring graphene during manufacturing graphene applied device that is used in e.g. high speed radio frequency switching device, involves transferring protection metal layer and graphene layer from supporter to substrate.

LEE J, KIM Y, MOON C, LEE S, LEE C, LEE J H, KIM Y S, MOON C Y, LEE S H, LEE C S

Making nanostructure involves forming graphene layer, forming block copolymer template layer on graphene layer and precursor pattern of metal coupled to block copolymer template layer, and forming metal nanopattern on graphene layer.

KIM U, KIM J, ROH Y, PARK S, PARK Y, YOO S, LEE C, LEE J, CHEON S, KIM U J, KIM J E, ROH Y G, PARK S J, PARK Y S, YOO S M, LEE C W, LEE J S, CHEON S M

Graphene electronic device has flash memory region and ferroelectric memory region that are positioned on graphene layer.

KIM Y, LEE C, LEE J, KIM Y S, LEE C S, LEE J H

Graphene oxide used as substituent for enzyme, in biological material industry and detergent industry, hydrolyzes ester linkage of organic compound.

JANG S, JEONG H K, LEE C, LEE H, HEON J S, HAN J, KYUNG J H

Manufacturing method of graphene device e.g. FET , nanogap device, graphene sensor involves etching protection layer until residual layer made of material for forming protection layer remains on active area of graphene layer.

LEE J, JEON T, KIM Y, LEE C, JUNG Y, LEE J H, JEON T H, KIM Y S, LEE C S, JUNG Y S

Method for preventing charge accumulation by utilizing graphene layer in semiconductor device manufacturing process, involves forming graphene layer before patterning material layer on surface of substrate under material layer.

ROH Y, KIM U, LEE C, ROH Y G, KIM U J, LEE C W

Apparatus for manufacturing device used for preparing graphene for electronic circuit, comprises graphene structure including metal catalyst layer formed on substrate, protection layer, and graphene layer, and power unit.

LEE J, JUNG Y, KIM Y, LEE C, MOON C, LEE J H, JUNG Y S, KIM Y S, LEE C S, MOON C Y, MUN Z R

Transistor useful for electronic devices such as a radio frequency device for high frequency and display, comprises a channel layer including graphene, a gate insulating layer, a gate facing the channel layer, and a source and a drain.

LEE C, KIM Y, LEE J, JUNG Y, LEE C S, KIM Y S, LEE J H, JUNG Y S