国家/地区 中国（11）
IPC部 C（7） H（6） B（3）
IPC大类 H01（6） C01（5） B82（3）
C30（2）
IPC小类 H01L（6） C01B（5） B82Y（3）
C30B（2）
IPC C01B031/04（5） B82Y030/00（3） C30B029/02（2）
H01L031/0216（2） H01L031/0224（2） H01L031/068（2）
H01L033/14（2）
发明人 LIN S（12）
公开年 2013（8） 2014（4）
申请年 2013（12）
专利权人 HANGZHOU GEL.（8） UNIV ZHEJIAN.（2）

Composite nanophase absorbing material obtained by uniformly loading cobalt and graphene on a thin surface, and drilling to form nano-granule.

LIN S, WANG F, YU J, ZHU H

Manufacturing graphene film comprises annealing first substrate in furnace filled with mixed gas, moving substrate into growing chamber of molecular beam epitaxy system, heating carbon source and depositing it on surface of substrate.

LIN S, LIN M, LIN S Y, LIN M Y

Graphene optical FET, has two gold electrodes covered with silicon layer, and cadmium selenide quantum point layer arranged between two gold electrodes, where diameter of cadmium selenide quantum point layer is in specific value.

LIN S, LI W, ZHANG J

Vertical-type graphene LED chip, has substrate bonded with graphene through metal substrate layer, where substrate is connected with interface and formed with p-type and n-type gallium nitride layers and multi-quantum-well layer.

LIN S, LI X

Graphene/silicon solar battery has back electrode, P-type silicon layer, n-type silicon layer, n-type doped graphene-containing layer and front electrode which are formed in order from bottom surface to top surface.

LIN S, LI X

Vertical type graphene LED chip, has first bonding metal layer provided with P-type electrode, N-type gallium nitride layer provided with N- type electrode, and second bonding metal layer provided with graphite layer.

LIN S, LI X

Graphene/silicon solar battery, has rear and front electrodes, P-type silicon layer and N-type doped graphene-containing layer that are fixed with each other, and carrier concentration of graphene-containing layer is specific in range.

LIN S, LI X

Preparation of graphene film involves subjecting non-metallic substrate in oxygen plasma cleaning machine, sending non-metallic substrate into vacuum reaction furnace, adding hydrogen, heat preserving, and placing substrate in quartz glass.

LI P, BAO Q, CHEN C, XU M, YUAN J, LIN S

Preparation of fluorinated graphene using atomic layer deposition device used for, e.g. electronic device by etching copper foil with graphene using corrosive solution, transferring in substrate, washing and reacting with fluorinating agent.

DONG C, LIN S

Chemical vapor deposition method for preparing dual-layer graphene involves regulating flow of carbon source gas and pressure intensity of reaction chamber under atmosphere of reductive gas and inert gas, and growing graphene film.

DONG C, LIN S