国家/地区 中国（10）
IPC部 H（7） C（3） B（2）
IPC大类 H01（7） C01（2）
IPC小类 H01L（5）
IPC H01L029/78（4） H01L021/336（3） H01L021/00（2）
发明人 LIU X（10）
公开年 2011（5） 2010（3） 2012（2）
申请年 2010（10）
专利权人 INST MICROEL.（3） UNIV CHINA E.（2） UNIV NANJING.（2）

FET, has source and drain contact electrodes and graphene trench region that are linked together, where graphene trench region is formed on upper part of insulating substrate.

LIU X, LIU M, HAN M, JI Z, WANG H, SHANG L

FET, has source/drain contact electrode and graphene trench region formed on insulating medium layer, where source contact and drain contact electrodes are respectively connected with graphene trench region.

LIU X, LIU M, HAN M, JI Z, WANG H, SHANG L

Preparation of graphene load nano-manganese oxohydroxide composite material by mixing manganese chloride tetrahydrate graphite oxide with isopropanol, reacting, centrifuging, cleaning, drying and grinding.

WANG X, LU L, YANG X, CHEN S, ZHU J, LIU X, HAN Q

Preparation of graphene loaded cobalt hydroxide nanocomposite material by mixing cobalt chloride hexahydrate, graphite oxide, and isopropanol, ultrasonically and uniformly dispersing, heating, and adding sodium sulfide and water.

WANG X, LU L, YANG X, CHEN S, ZHU J, LIU X, HAN Q

Preparation of benzimidazole similarly functionalized graphene hybrid material comprises mutual linking of amino bond through condensation and performing heat reduction of acyl chloride and amino group.

WANG D, CHEN Y, HAN Z, ZHUANG Q, XIE Z, LIU X

Graphene device structure for complementary metal-oxide-semiconductor, has semiconductor doped regions separated from gate region, where contacts of structure are formed on semiconductor doped regions.

LIU X, ZHU H, WANG W, LIANG Q, JIN Z, ZHONG H, YE T

Method for producing graphene oxide doped with monodirectional carbon/carbon composite material involves placing graphene oxide and carbon fiber in mold, and keeping carbon fiber in every layer in same direction.

LIU X, HU Z, LI T, WAN J

Detecting mercury ion by using oligonucleotides and graphene oxide, involves adding oligonucleotides fluorescence probe marked with dye in buffer solution and adding graphene oxide to solution.

HUANG W, FAN Q, LIU X, MIAO L

Graphene field effect transistor comprises a substrate gate, a lower gate dielectric material, graphene, a source and a drain electrode, where the lower gate dielectric material is positioned on the surface of the substrate gate.

LI Y, LIU X, CHEN Y, WANG Z, HAO X

Transferring of graphene thin film for graphene semiconductor device involves coating organic colloid layer on surface of graphene thin film through spin coating and drying organic colloid layer coated on surface of graphene tin film.

CHEN Y, LIU X, LI Y, WANG Z