国家/地区 德国（11） 美国（11） 中国（8）
IPC部 H（10） C（5） B（4）
G（4）
IPC大类 H01（9） C01（5） G01（4）
B81（3） B82（2） H04（2）
IPC小类 H01L（9） C01B（5） B81B（3）
B81C（3） B82Y（2） G01N（2）
G01R（2） H04R（2）
IPC H01L029/16（7） H01L021/02（4） B81B007/02（3）
B81C001/00（3） C01B031/04（3） H01L021/324（3）
H01L029/66（3） B81B003/00（2） G01N027/12（2）
G01N033/00（2） G01R033/07（2） H01L021/20（2）
H01L021/28（2） H01L021/285（2） H01L021/336（2）
发明人 RUHL G（11）
公开年 2015（3） 2016（3） 2018（2）
申请年 2014（3）  2015（3）  2016（3） 
专利权人 INFINEON TEC.（11） RUHL G（5） DEHE A（2）

Method for forming graphene membrane component for microphone, involves performing energy of adhesion between adhesive layer and graphene membrane which is greater than energy of adhesion between bulk region and graphene membrane.

RUHL G, KOENIG M, RUHR G

Semiconductor device comprises transistor doping region of vertical transistor structure, graphene layer portion adjacent to portion of transistor doping region and transistor wiring structure adjacent to graphene layer portion.

SCHULZE H, RUPP R, RUHL G

Method for manufacturing semiconductor component, involves providing carrier wafer and silicon carbide wafer, and bonding silicon carbide layer with carrier wafer during splitting process for forming graphene material on carbide layer.

RUHL G, SCHULZE H, LIPPERT G, ZIMMER T

Electronic device e.g. passive element, has dielectric structure whose first contact region and second contact region are configured to adjust electrical characteristics of two-dimensional material in contact surfaces of graphene layer.

KOENIG M, RUHL G, RUHR G

Forming graphene structure, comprises forming body with protrusion and forming graphene layer at protrusion outer peripheral surface, or forming cylindrical opening in body and forming graphene layer at inner peripheral surface of opening.

IRSIGLER P, RUHL G, SCHULZE H, SHULZ H, RUHR G, ILSGLLE P

Method for processing substrate used in manufacture of e.g. electronic devices, involves forming graphene layer from specific layer on surface of carrier by temperature treatment.

PRUEGL K, RUHL G, RUHR G, PRUGER K

Gas sensor for measuring concentration of carbon dioxide in gas environment, comprises graphene layer having side facing towards gas environment, electrode layer comprising electrodes, and chalcogenide layer.

RUHL G, HIRSCH T, ZOEPFL A

Electrical device e.g. photodetector, has multi-layer graphene structure for laterally contacting single-layer graphene part, and graphite part in contact with surface of multi-layer graphene structure.

RUHL G, FOERG R

Hall sensor structure, has carrier layer provided with side part, and seed layer whose part is removed between carrier layer and graphene layer to form graphene structure of graphene layer, where seed layer is formed on side part.

DEHE A, ECKINGER M, KOLB S, RUHL G, DEU A, RUHR G, IKEGINGER M

MEMS acoustic transducer, has dielectric spacer arranged on back plate unit between adjacent conductive perforated back plate portions, and graphene membranes supported by dielectric spacer and extended over perforated back plate portions.

DEHE A, RUHL G, DEU A, RUHR G